Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Autor: Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden

Publikováno v: Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)

Abstract Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device

Externí odkaz: https://doaj.org/article/bfb51b0b6b3648d6979cc29208c00b7b

Toward both p- and n-doping of hexagonal boron nitride using sub-bandgap illumination

Autor: Andre Perepeliuc, Rajat Gujrati, Ashutosh Srivastava, Phuong Vuong, Vishnu Ottapilakkal, Paul L. Voss, Suresh Sundaram, Jean-Paul Salvestrini, Abdallah Ougazzaden

Publikováno v: Oxide-based Materials and Devices XIV.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79a83c5159f0bbeb9af614e84754429e
https://doi.org/10.1117/12.2662309

Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

Autor: Karim Bouzid, Jean-Paul Salvestrini, Vishnu Ottapilakkal, Soufiane Karrakchou, Hibat E. Adjmi, Ali Ahaitouf, Paul L. Voss, Adama Mballo, Rajat Gujrati, Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Gilles Patriarche, Walid El Huni

Publikováno v: ACS Applied Electronic Materials
ACS Applied Electronic Materials, American Chemical Society, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩

International audience; We demonstrate the fabrication of vertical InGaN light-emitting diodes (LEDs) on large-area free-standing membranes, using a mechanical lift-off technique enabled by 2D h-BN. 30 μm-thick electroplated copper deposited on the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18d7b4da2c5a4e86e5831cb361457c1e
https://hal.archives-ouvertes.fr/hal-03350389

Understanding activation energy of dynamic recrystallization in Inconel 718

Autor: Sushil Mishra, Jyoti S. Jha, Rajat Gujrati, Chirag Gupta, Alankar Alankar

Publikováno v: Materials Science and Engineering: A. 744:638-651

Hot compression tests were performed on Inconel 718 to study high temperature flow stress-strain response and activation mechanism in the hot deformation. To model the flow stress response, we employed two physically based models namely Schӧcks-Seeg

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::253573696bc2267ab80e08e0233a74fe
https://doi.org/10.1016/j.msea.2018.12.008

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Autor: Simon Gautier, Soufiane Karrakchou, Ali Ahaitouf, Phuong Vuong, Tarik Moudakir, Gilles Patriarche, Rajat Gujrati, Ashutosh Srivastava, Suresh Sundaram, Thierry Leichle, Taha Ayari, Adama Mballo, Jean-Paul Salvestrini, Paul L. Voss, Abdallah Ougazzaden

Publikováno v: Scientific Reports
Scientific Reports, Nature Publishing Group, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩
Scientific Reports, 2020, 10 (1), pp.211. ⟨10.1038/s41598-020-77681-z⟩
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)

Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c30b58cd28efa93dbcc9ccc4c17ef030
https://hal.archives-ouvertes.fr/hal-03120983