Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Rajashree Nori"'
Publikováno v:
Physica B: Condensed Matter. 448:85-89
We employed a Scanning Tunnelling Microscope (STM) to study the surface topography and spatially resolved local electronic properties like local density of states (LDOS) of nanostructured films of La0.7Sr0.3MnO3 (LSMO). The nanostructured thin films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc3916a6c1e01c730746fa2f4fc4b4b6
https://doi.org/10.1016/j.physb.2014.03.047
https://doi.org/10.1016/j.physb.2014.03.047
Autor:
François Jomard, Valipe Ramgopal Rao, Rajashree Nori, Ashok Ray, Piyush Bhatt, R. Pinto, Saurabh Lodha, Michael Neumann-Spallart
Publikováno v:
IndraStra Global.
A plasma immersion ion implantation (PIII) process has been developed for realizing shallow doping profiles of phosphorus and boron in silicon using an in-house built dual chamber cluster tool. High Si etch rates observed in a 5% PH3 in H-2 plasma ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef9383cd42abaddad018c50807b728d5
https://igi.indrastra.com/items/show/52063
https://igi.indrastra.com/items/show/52063
Publikováno v:
MRS Proceedings. 1507
Achieving low resistance ohmic contacts for heavily doped devices is critical towards ensuring that contact resistance does not dominate the device performance. Here, we report contact resistance studies done on Pt/LSMO, Ni/LSMO and Au/LSMO metal-sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99ffdbe7e30e42be33602677e8503540
https://doi.org/10.1557/opl.2013.937
https://doi.org/10.1557/opl.2013.937
Autor:
N. Venkataramani, N. Ravi Chandra Raju, Gurudatt Rao, Senthil Srinivasan, Neeraj Panwar, Rajashree Nori, Naijo Thomas, P. Kumbhare, Udayan Ganguly
Publikováno v:
MRS Proceedings. 1507
The role of field-induced electrochemical migration oxygen ions in switching behaviour of LSMO films is established through I-V measurements under various top electrode device configurations. We report observation of bubbling, mechanical damage and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd83a7d97a0f1f8910d87141a3199291
https://doi.org/10.1557/opl.2013.381
https://doi.org/10.1557/opl.2013.381
Autor:
Sanchit Deshmukh, Senthil Srinivasan V S, N. Ravi Chandra Raju, Neeraj Panwar, Gurudatt Rao, Rajashree Nori, P. Kumbhare, Udayan Ganguly, N. Venkataramani
Publikováno v:
MRS Proceedings. 1507
A low thermal budget process for back-end compatible PCMO based RRAM cell is essential for 3D stacked memory. In this paper, we investigate two strategies to engineer low thermal budget processing for bipolar switching - (i) deposition engineering i.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91ede27547adb1b0f40e4de0a8f4590f
https://doi.org/10.1557/opl.2013.348
https://doi.org/10.1557/opl.2013.348
Autor:
D. S. Sutar, N. Ravi Chandra Raju, V. Ramgopal Rao, R. Pinto, Sangeeta Kale, Udayan Ganguly, Rajashree Nori
Publikováno v:
Journal of Applied Physics. 115:033518
Of all the colossal magnetoresistant manganites, La0.7Sr0.3MnO3 (LSMO) exhibits magnetic and electronic state transitions above room temperature, and therefore holds immense technological potential in spintronic devices and hybrid heterojunctions. As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87ccb1e8a7781d1fe65baf2f437eb336
https://doi.org/10.1063/1.4862909
https://doi.org/10.1063/1.4862909