Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Rajarao Jammy"'
Autor:
Chang Yong Kang, B. H. Lee, Jungwoo Oh, Rajarao Jammy, Rino Choi, Herman C. Floresca, Young Jun Suh, Ji-Woon Yang, Moon J. Kim, Jiyoung Kim, Hsing-Huang Tseng
Publikováno v:
IEEE Electron Device Letters. 29:487-490
In this letter, the effects of TiN-induced strain engineering on device characteristics for a metal gate/high-k silicon-on-insulator fin-shaped field-effect transistors were studied. From a convergent-beam electron-diffraction analysis and simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00491870682a91ede57c81a35deaf1cb
https://doi.org/10.1109/led.2008.919782
https://doi.org/10.1109/led.2008.919782
Publikováno v:
Journal of Applied Physics. 90:1898-1902
In this article, the conduction mechanisms in nitride–oxide stacked structures on Si are investigated experimentally and theoretically. Amorphous silicon nitride films (3–5 nm thick) were deposited by low-pressure chemical vapor deposition. The u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6648821fa1586b07b69545caf7bfe3
https://doi.org/10.1063/1.1383576
https://doi.org/10.1063/1.1383576
Publikováno v:
IEEE Electron Device Letters. 23:547-549
A widely used halo implant process of counter doping has a tradeoff between the short channel effects and the parasitic junction capacitance. In this letter, we propose a novel drain engineering concept, large-angle-tilt-implantation of nitrogen (LAT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1bed77ead733802cdf01304248aa5ec
https://doi.org/10.1109/led.2002.801324
https://doi.org/10.1109/led.2002.801324
Publikováno v:
Applied Physics Letters. 78:3241-3243
Photo-enhanced negative differential resistance (NDR) and photo-accelerated time-dependent dielectric breakdown (TDDB) were observed in thin nitride–oxide (N–O) dielectric film biased with gate negative under tungsten lamp illumination. The photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::634f1fd395d5132364a1de9b4c4944e8
https://doi.org/10.1063/1.1373409
https://doi.org/10.1063/1.1373409
Autor:
Paul Kirsch, Y. T. Chen, Kanghoon Jeon, D. H. Ko, S. H. Lee, B. Sassman, Wei-Yip Loh, J. Oh, Hi-Deok Lee, Rajarao Jammy, I. Ok, Jiacheng Huang
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc6c2d98a31f4241371ea69e8512ca03
https://doi.org/10.7567/ssdm.2010.p-3-20
https://doi.org/10.7567/ssdm.2010.p-3-20
Autor:
Muhammad Mustafa Hussain, Paul Kirsch, M. Cruz, S. Suthram, Casey Smith, K. Rader, Chadwin D. Young, Chanro Park, Rajarao Jammy
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd31cedf2250c6d57eb2b57168c422cd
https://doi.org/10.7567/ssdm.2008.a-7-2
https://doi.org/10.7567/ssdm.2008.a-7-2
Autor:
K.J. Choi, Chadwin D. Young, J. Oh, Y.N. Tan, Rajarao Jammy, Byung Jin Cho, Gennadi Bersuker, P. Sivasubramani, D. Q. Kelly, Se Hoon Lee, C. Park, P. Y. Hung, Niti Goel, J. Price, Byoung Hun Lee, P. Lysaght, Jiacheng Huang, Dawei Heh, H.R. Harris, Paul Kirsch, David Gilmer, Prashant Majhi, H-H. Tseng, Chanro Park
Publikováno v:
2008 Symposium on VLSI Technology.
For the first time, we provide mechanistic understanding of high gate leakage current on surface channel SiGe pFET with high-k/metal gate to enable sub 1 nm EOT. The primary mechanism limiting EOT scaling is Ge enhanced Si oxidation resulting in a th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e165c25e7c57c89640e570ccb9520908
https://doi.org/10.1109/vlsit.2008.4588571
https://doi.org/10.1109/vlsit.2008.4588571
Autor:
Toshikazu Nishida, T. Acosta, S. Suthram, Prashant Majhi, Niti Goel, H-H. Tseng, Hyun-Chul Kim, Injo Ok, Scott E. Thompson, J.C. Lee, Andrew D. Koehler, Rajarao Jammy, H.R. Harris, Srivatsan Parthasarathy, Y. Sun, W. Tsai
Publikováno v:
2008 Symposium on VLSI Technology.
For the first time strain additivity on III-V using prototypical (100) GaAs n- and p-MOSFETs is studied via wafer bending experiments and piezoresistance coefficients are extracted and compared with those for Si and Ge MOSFETs. Further understanding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b764e0fb27efee00ea74f2853d1dbe0
https://doi.org/10.1109/vlsit.2008.4588611
https://doi.org/10.1109/vlsit.2008.4588611
Autor:
Prashant Majhi, Byung Jin Cho, Gennadi Bersuker, Sanghyun Lee, C. Y. Kang, Chanro Park, H.R. Harris, J. Oh, Chadwin D. Young, Rajarao Jammy, H.-H. Tseng, Wei-Yip Loh, Byoung Hun Lee, Paul Kirsch, B. Sassman
Publikováno v:
2008 Symposium on VLSI Technology.
We report on new observations of hot carrier (HC) degradation in strained Si/Si1-xGex(x = 0.2 to 0.5) p-MOSFETs. By using low voltage current-voltage measurement coupled with carrier separation, we are able, for the first time, to easily distinguish
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40477287218b1dbb96626897862b1f1a
https://doi.org/10.1109/vlsit.2008.4588562
https://doi.org/10.1109/vlsit.2008.4588562
Autor:
Byoung Hun Lee, Gennadi Bersuker, H.R. Harris, Kyong-Taek Lee, Chadwin D. Young, Hi-Deok Lee, C. Y. Kang, H.-H. Tseng, Rajarao Jammy, Ji-Woon Yang
Publikováno v:
2008 IEEE International Reliability Physics Symposium.
New hot-carrier degradation phenomenon that depends on gate bias in nano-scale floating body MOSFETs is identified using 2-D device simulation and hot-carrier injection measurements. In the case of sufficiently high gate voltage, the potential of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d153516f8179c862b7f94e92508e0563
https://doi.org/10.1109/relphy.2008.4559015
https://doi.org/10.1109/relphy.2008.4559015