Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots

Autor: Raja S. R. Gajjela, Paul M. Koenraad

Publikováno v: Nanomaterials, Vol 11, Iss 1, p 85 (2021)

The fundamental understanding of quantum dot (QD) growth mechanism is essential to improve QD based optoelectronic devices. The size, shape, composition, and density of the QDs strongly influence the optoelectronic properties of the QDs. In this arti

Externí odkaz: https://doaj.org/article/33580cb064554a59b074eecd58c8bb41

Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots

Autor: Michael P. Moody, Petr Klenovský, Elisa M. Sala, Raja S. R. Gajjela, James O. Douglas, PM Paul Koenraad, Arthur L. Hendriks, Paul A. J. Bagot, Petr Steindl, Dieter Bimberg

Publikováno v: Light, Science & Applications
Light: Science and Applications, 10:125. Nature Publishing Group
Light: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)
Light: Science & Applications, 10
Light: Science & Applications

We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy (X-STM) and atom probe tomography

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b7a4a2adf6522d0a57b26bbcddf514b
https://eprints.whiterose.ac.uk/175423/1/s41377-021-00564-z.pdf

Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots

Autor: Raja S. R. Gajjela, PM Paul Koenraad, Arthur L. Hendriks, A. A. Quivy, Tiago F. de Cantalice, Ahmad Alzeidan

Publikováno v: Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Physical Review Materials, 4(11):114601. American Physical Society
Physical Review Materials

Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submono-layer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the presence of (2×4) andc(4×4) surface reconstructions. Multiple laye

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c542bf62a7006a96d82b40853deba7bd
http://arxiv.org/abs/2008.11711

High-Density Sb2Te3 Nanopillars Arrays by Templated Bottom-Up MOCVD Growth

Autor: Luca Giampaolo Nobili, Raja S. R. Gajjela, Claudia Wiemer, Alessio Lamperti, Massimo Longo, Christian Martella, Laura Lazzarini, Lucia Nasi, Raimondo Cecchini

Publikováno v: Small, 15(37):1901743. Wiley-VCH Verlag
Small (Weinh., Print) 0 (2019): 1901743–1901743-9. doi:10.1002/smll.201901743
info:cnr-pdr/source/autori:Cecchini Raimondo, Gajjela Raja S. R., Martella Christian, Wiemer, Claudia, Lamperti Alessio, Nasi Lucia, Lazzarini Laura, Nobili Luca G., Longo Massimo/titolo:High-Density Sb2Te3 Nanopillars Arrays by Templated, Bottom-Up MOCVD Growth/doi:10.1002%2Fsmll.201901743/rivista:Small (Weinh., Print)/anno:2019/pagina_da:1901743/pagina_a:1901743-9/intervallo_pagine:1901743–1901743-9/volume:0
Small

Sb2Te3 exhibits several technologically relevant properties, such as high thermoelectric efficiency, topological insulator character, and phase change memory behavior. Improved performances are observed and novel effects are predicted for this and ot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3084d25d72980713dc14d08b1aa3f2d
http://hdl.handle.net/11311/1120070