Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Raj Jammy"'
Autor:
Chris Hobbs, Richard P. Hill, Harlan Stamper, B.-G. Min, Raj Jammy, Daniel Franca, Martin Rodgers, Paul Kirsch, Steve Gausepohl, Saikumar Vivekanand, K.-W. Ang, Injo Ok
Publikováno v:
ECS Transactions. 50:669-672
High mobility materials (such as SiGe, Ge and III-V) are attractive replacements for the conventional Si channel material in future CMOS technology nodes (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82ea8d9b2cf04d9c9acd58de8407da93
https://doi.org/10.1149/05009.0669ecst
https://doi.org/10.1149/05009.0669ecst
Autor:
Chadwin D. Young, G. Bersuker, Injo Ok, Kerem Akarvardar, Matt Minakais, James Pater, Paul Kirsch, Ken Matthews, S. Deora, T. Ngai, Raj Jammy, Chris Hobbs, K.-W. Ang, Mehmet Onur Baykan
Publikováno v:
ECS Transactions. 50:201-206
The performance and reliability of doped and undoped (100) and (110) sidewall silicon-on-insulator (SOI) FinFETs with an Hf-based gate dielectric were evaluated. The electron mobility of the (110) FinFET sidewall is comparable to the (100) FinFET sid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e469a2c7a38f041ef01d1b3456bcbdb
https://doi.org/10.1149/05004.0201ecst
https://doi.org/10.1149/05004.0201ecst
Autor:
Raj Jammy, Satoshi Inaba
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e87a18e30184ae5800fc049adf028e
https://doi.org/10.1109/vlsit.2016.7573355
https://doi.org/10.1109/vlsit.2016.7573355
Autor:
Ulrich Mantz, Diane K. Stewart, Raleigh Estrada, Bernhard Goetze, Ingo Schulmeyer, Shawn McVey, Lewis Stern, Raj Jammy, Lorenz Lechner, Allen Gu
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Semiconductor devices and packages have firmly moved in to an era where scaling is driven by 3D architectures. However, most of the metrology and inspection technologies in use today were developed for 2D devices and are inadequate to deal with 3D st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::207c773f391f58f28e0879c1214e89b0
https://doi.org/10.1109/vlsi-tsa.2016.7480508
https://doi.org/10.1109/vlsi-tsa.2016.7480508
Autor:
Byoung Hun Lee, Hsing-Huang Tseng, Seung-Ho Hong, Rock-Hyun Baek, Yoon-Ha Jeong, Jae Chul Kim, Chang Yong Kang, Raj Jammy, Kyong Taek Lee, Hyun-Sik Choi, Gennadi Bersuker, Min-Sang Park, Seung-Hyun Song, Gil-Bok Choi, Hyun Chul Sagong
Publikováno v:
Microelectronic Engineering. 88:3411-3414
Charge pumping and low frequency noise measurements for depth profiling have been studied systematically using a set of gate stacks with various combinations of IL and HfO"2 thicknesses. The distribution of generated traps after HCI and PBTI stress w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a095546fe76011f5b10170f9a88f4b
https://doi.org/10.1016/j.mee.2009.08.002
https://doi.org/10.1016/j.mee.2009.08.002
Autor:
C. Y. Kang, Hyuk-Min Kwon, Sang-Uk Park, Gennadi Bersuker, Hi-Deok Lee, Raj Jammy, Won-Ho Choi, Byung-Seok Park, In-Shik Han
Publikováno v:
Microelectronic Engineering. 88:3389-3392
In this paper, reliability as well as electrical properties of high capacitance density metal-insulator-metal (MIM) capacitor with hafnium-based dielectric is analyzed in depth. The fabricated MIM capacitor exhibits not only high capacitance density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1da1fd13a3cf7bc2b459f3a37963d7c
https://doi.org/10.1016/j.mee.2010.01.012
https://doi.org/10.1016/j.mee.2010.01.012
Autor:
Raj Jammy, Kanghoon Jeon, Prashant Majhi, Hsing-Huang Tseng, Wei-Yip Loh, Jungwoo Oh, Chenming Hu, Chang Yong Kang, Wade Xiong, Tsu Jae King Liu
Publikováno v:
Solid-State Electronics. :22-27
Planar band-to-band tunneling FETs (TFETs) have been fabricated on silicon-on-insulator (SOI) substrates using conventional CMOS technologies with a highly scaled sub-60 nm gate length (effective gate length [ L g ] ∼ 40 nm due to an overlap betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84bb29f657a5781cdecde8a7cf6eefa6
https://doi.org/10.1016/j.sse.2011.06.019
https://doi.org/10.1016/j.sse.2011.06.019
Publikováno v:
ECS Transactions. 35:319-324
This work introduces a characterization scheme for junction development of conventional inversion mode bulk MOSFETs with novel III-V substrates, that effectively reduces the cost and development cycle. The scheme is composed of high resolution X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab570fc61d15c656d9fc299fa44c45a7
https://doi.org/10.1149/1.3569924
https://doi.org/10.1149/1.3569924
Autor:
Raj Jammy, Jungwoo Oh, Prashant Majhi, Richard Hill, Jeff Huang, Wei-Yip Loh, Paul Kirsch, Niti Goel, Joel Barnett, Chanro Park, J. Price
Publikováno v:
ECS Transactions. 35:335-344
The superior transport properties of III-V materials makes them attractive choices to enable improved performance at low power. This paper examines the module targets and challenges for III-V materials to be successfully integrated for high performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb81bf88bddecf84cc87b6f8e2416b6e
https://doi.org/10.1149/1.3569926
https://doi.org/10.1149/1.3569926
Publikováno v:
IEICE Transactions on Electronics. :712-716
We have demonstrated high mobility MOS transistors on high quality epitaxial SiGe films selectively grown on Si (100) substrates. The hole mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by an optimized Si c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a158723a8a9ce2e9249bb2a58032ea66
https://doi.org/10.1587/transele.e94.c.712
https://doi.org/10.1587/transele.e94.c.712