Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Raj Jammy"'
Autor:
Chris Hobbs, Richard P. Hill, Harlan Stamper, B.-G. Min, Raj Jammy, Daniel Franca, Martin Rodgers, Paul Kirsch, Steve Gausepohl, Saikumar Vivekanand, K.-W. Ang, Injo Ok
Publikováno v:
ECS Transactions. 50:669-672
High mobility materials (such as SiGe, Ge and III-V) are attractive replacements for the conventional Si channel material in future CMOS technology nodes (
Autor:
Chadwin D. Young, G. Bersuker, Injo Ok, Kerem Akarvardar, Matt Minakais, James Pater, Paul Kirsch, Ken Matthews, S. Deora, T. Ngai, Raj Jammy, Chris Hobbs, K.-W. Ang, Mehmet Onur Baykan
Publikováno v:
ECS Transactions. 50:201-206
The performance and reliability of doped and undoped (100) and (110) sidewall silicon-on-insulator (SOI) FinFETs with an Hf-based gate dielectric were evaluated. The electron mobility of the (110) FinFET sidewall is comparable to the (100) FinFET sid
Autor:
Hi Deok Lee, Woon-Il Choi, Hyuk-Min Kwon, Raj Jammy, Seung Yong Sung, Sung Kyu Kwon, Chang Yong Kang, Jong Kwan Shin
Publikováno v:
Advanced Materials Research. 658:112-115
RF characteristics of metal-insulator-metal (MIM) capacitors with SiO2/HfO2/SiO2 (SHS) were investigated using an equivalent circuit model that is associated with the main impedance ZMIM.cap and the substrate-related conductance Ysub. However, the pa
Autor:
Raj Jammy, Satoshi Inaba
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
Autor:
Ulrich Mantz, Diane K. Stewart, Raleigh Estrada, Bernhard Goetze, Ingo Schulmeyer, Shawn McVey, Lewis Stern, Raj Jammy, Lorenz Lechner, Allen Gu
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Semiconductor devices and packages have firmly moved in to an era where scaling is driven by 3D architectures. However, most of the metrology and inspection technologies in use today were developed for 2D devices and are inadequate to deal with 3D st
Autor:
Ravindranath Droopad, Jungwoo Oh, Raj Jammy, Dmitry Veksler, Jeff Huang, Wei-Yip Loh, Richard Hill, T. H. Cunningham, Chris Hobbs, Paul Kirsch, Man Hoi Wong, Tae-Woo Kim
Publikováno v:
ECS Transactions. 45:179-184
The superior transport properties of III-V materials make them attractive choices to enable improved performance at low power. This paper examines the integration challenges of III-V materials in advanced CMOS logic at or beyond the 11 nm technology
Autor:
Byoung Hun Lee, Hsing-Huang Tseng, Seung-Ho Hong, Rock-Hyun Baek, Yoon-Ha Jeong, Jae Chul Kim, Chang Yong Kang, Raj Jammy, Kyong Taek Lee, Hyun-Sik Choi, Gennadi Bersuker, Min-Sang Park, Seung-Hyun Song, Gil-Bok Choi, Hyun Chul Sagong
Publikováno v:
Microelectronic Engineering. 88:3411-3414
Charge pumping and low frequency noise measurements for depth profiling have been studied systematically using a set of gate stacks with various combinations of IL and HfO"2 thicknesses. The distribution of generated traps after HCI and PBTI stress w
Autor:
Ying-Ying Zhang, In-Shik Han, Hi-Deok Lee, Won-Ho Choi, Raj Jammy, Byoung-Seok Park, C. Y. Kang, Hyuk-Min Kwon, Sang-Uk Park, Byoung Hun Lee
Publikováno v:
Microelectronic Engineering. 88:3415-3418
In this paper, reliability characteristics of nMOSFETs with La-incorporated HfSiON and HfON and metal gate have been studied. HfLaSiON shows greater device degradation by hot carrier (HC) stress than by positive bias temperature (PBT) stress, while H
Autor:
In-Shik Han, Hyuk-Min Kwon, Hi-Deok Lee, Byoung Hun Lee, Min-Ki Na, Jung-Deuk Bok, Raj Jammy, Sang-Uk Park, C. Y. Kang, Won-Ho Choi
Publikováno v:
Microelectronic Engineering. 88:3399-3403
In this paper, carrier transport mechanism of MOSFETs with HfLaSiON was analyzed. It was shown that gate current is consisted of Schottky emission, Frenkel-Poole (F-P) emission and Fowler-Nordheim (F-N) tunneling components. Schottky barrier height i
Autor:
C. Y. Kang, Hyuk-Min Kwon, Sang-Uk Park, Gennadi Bersuker, Hi-Deok Lee, Raj Jammy, Won-Ho Choi, Byung-Seok Park, In-Shik Han
Publikováno v:
Microelectronic Engineering. 88:3389-3392
In this paper, reliability as well as electrical properties of high capacitance density metal-insulator-metal (MIM) capacitor with hafnium-based dielectric is analyzed in depth. The fabricated MIM capacitor exhibits not only high capacitance density