Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Raisa Fabiha"'
Publikováno v:
Oxide Electronics
Publikováno v:
Magnetism; Volume 2; Issue 2; Pages: 117-129
We derive the reflection and refraction laws for an electron spin incident from a quasi-two-dimensional semiconductor region (with no spin–orbit interaction) on the metallic surface of a topological insulator (TI) when the two media are in contact
Autor:
Raisa Fabiha, Jonathan Lundquist, Sudip Majumder, Erdem Topsakal, Anjan Barman, Supriyo Bandyopadhyay
Publikováno v:
Advanced science (Weinheim, Baden-Wurttemberg, Germany). 9(8)
We investigate tripartite coupling between phonons, magnons and photons in a periodic array of elliptical magnetostrictive nanomagnets delineated on a piezoelectric substrate to form a two-dimensional two-phase multiferroic crystal. A surface acousti
Autor:
Raisa Fabiha, Supriyo Bandyopadhyay
Publikováno v:
Journal of Physics: Condensed Matter. 35:035802
The Landauer ‘residual resistivity dipole’ is a well-known concept in electron transport through a disordered medium. It is formed when a defect/scatterer reflects an impinging electron causing negative charges to build up on one side of the scat
Publikováno v:
2018 10th International Conference on Electrical and Computer Engineering (ICECE).
A grid connected solar photovoltaic system has been designed for a residential hall in BUET. Survey results have been used to calculate the load and available rooftop area has been calculated to optimize the system size. An economic analysis is also
Publikováno v:
2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC).
In this paper, we propose a two-dimensional analytical model of single material symmetric Double Gate Stack-Oxide Junctionless Field Effect Transistor (DGS-JLFET) for subthreshold region. This model has been investigated and expected to improve subth
Publikováno v:
2017 International Conference on Electrical, Computer and Communication Engineering (ECCE).
In this paper, the potential distribution for symmetric double gate stack-oxide junctionless field effect transistor (DGS-JLFET) in subthreshold region has been observed. Using the potential distribution, current vs voltage (I ds vs. V gs ) character