Zobrazeno 1 - 10
of 112
pro vyhledávání: '"Rainer Timm"'
Autor:
Maryam Khalilian, Axel Persson, David Lindgren, Martin Rosén, Filip Lenrick, Jovana Colvin, B. Jonas Ohlsson, Rainer Timm, Reine Wallenberg, Lars Samuelson, Anders Gustafsson
Publikováno v:
Nano Select, Vol 3, Iss 2, Pp 471-484 (2022)
Abstract To improve the performance and efficiency of Al containing III‐Nitride‐based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects. The main sources of the disl
Externí odkaz:
https://doaj.org/article/c00109321a4d4b138fade2186126ef5f
Autor:
Yi Liu, Johan V. Knutsson, Nathaniel Wilson, Elliot Young, Sebastian Lehmann, Kimberly A. Dick, Chris J. Palmstrøm, Anders Mikkelsen, Rainer Timm
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Site-selected crystal material synthesis at the atomic scale has been a long-standing challenge. Here the authors use nanowire crystal phase heterostructures as templates for self-selective growth of one- and two-dimensional GaBi nanostructures, whic
Externí odkaz:
https://doaj.org/article/510ad5ed5c0d459897dc04865d63585f
Autor:
Rainer Timm, Ashley R. Head, Sofie Yngman, Johan V. Knutsson, Martin Hjort, Sarah R. McKibbin, Andrea Troian, Olof Persson, Samuli Urpelainen, Jan Knudsen, Joachim Schnadt, Anders Mikkelsen
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Atomic layer deposition of high-quality thin oxide layers is crucial for many modern semiconductor electronic devices. Here, the authors explore the surface chemistry during the initial deposition and observe a previously unknown two-step process, wi
Externí odkaz:
https://doaj.org/article/a09ceeac62c14ef0b15f85073d70ab40
Publikováno v:
ACS Omega, Vol 2, Iss 8, Pp 4772-4778 (2017)
Externí odkaz:
https://doaj.org/article/8b4d8686ccf4470086b4b446c1b34d8c
Autor:
Andrea Troian, Johan V. Knutsson, Sarah R. McKibbin, Sofie Yngman, Aein S. Babadi, Lars-Erik Wernersson, Anders Mikkelsen, Rainer Timm
Publikováno v:
AIP Advances, Vol 8, Iss 12, Pp 125227-125227-8 (2018)
Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the In
Externí odkaz:
https://doaj.org/article/f5826e7ec9214ecaab1bc10e1d49d575
Autor:
Giulio D’Acunto, Roman Tsyshevsky, Payam Shayesteh, Jean-Jacques Gallet, Fabrice Bournel, François Rochet, Indiana Pinsard, Rainer Timm, Ashley R. Head, Maija Kuklja, Joachim Schnadt
Publikováno v:
Chemistry of Materials. 35:529-538
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1595a71d69e3022b8b278a3e5d820275
https://doi.org/10.1021/acs.chemmater.2c02947
https://doi.org/10.1021/acs.chemmater.2c02947
Autor:
S. Fatemeh Mousavi, Yen-Po Liu, Giulio D’Acunto, Andrea Troian, José M. Caridad, Yuran Niu, Lin Zhu, Asmita Jash, Vidar Flodgren, Sebastian Lehmann, Kimberly A. Dick, Alexei Zakharov, Rainer Timm, Anders Mikkelsen
Publikováno v:
ACS Applied Nano Materials. 5:17919-17927
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02b28a44316c12ac68c5685e6c994c7d
https://doi.org/10.1021/acsanm.2c03891
https://doi.org/10.1021/acsanm.2c03891
Autor:
Giulio D’Acunto, Rosemary Jones, Lucía Pérez Ramírez, Payam Shayesteh, Esko Kokkonen, Foqia Rehman, Florence Lim, Fabrice Bournel, Jean-Jacques Gallet, Rainer Timm, Joachim Schnadt
Publikováno v:
The Journal of Physical Chemistry C. 126:12210-12221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640d46e85475658da0c2aa6b04350f69
https://doi.org/10.1021/acs.jpcc.2c02683
https://doi.org/10.1021/acs.jpcc.2c02683
Autor:
Zhaoxia Bi, Jovana Colvin, Anders Gustafsson, Rainer Timm, Reine Wallenberg, Bo Monemar, Mikael Björk, Lars Samuelson
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61c72e2dd4fb33956aa1dbf0a2dd1e2f
https://doi.org/10.1117/12.2649606
https://doi.org/10.1117/12.2649606
Autor:
Zhongyunshen Zhu, Adam Jönsson, Yen-Po Liu, Johannes Svensson, Rainer Timm, Lars-Erik Wernersson
Publikováno v:
ACS Applied Electronic Materials
Sb-based semiconductors are critical p-channel materials for III–V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d2da88c3dcc13f88e8f477d8505463c
https://doi.org/10.1021/acsaelm.1c01134
https://doi.org/10.1021/acsaelm.1c01134