Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Rainer Minixhofer"'
Publikováno v:
Fluctuation and Noise Letters. 21
New results are presented for the low frequency noise (LFN) characterization of N-MOS and P-MOS from a standard CMOS technology node. The impact of n[Formula: see text] and p[Formula: see text] polysilicon gate doping on the LFN for N-MOS and P-MOS d
Autor:
Konstantinos Tselios, Jakob Michl, Theresia Knobloch, Hubert Enichlmair, Eleftherios G. Ioannidis, Rainer Minixhofer, Tibor Grasser, Michael Waltl
Publikováno v:
Microelectronics Reliability. 138:114701
Autor:
Hubert Enichlmair, Michael Waltl, Konstantinos Tselios, Eleftherios G. Ioannidis, Rainer Minixhofer, Gerhard Rzepa, Dominic Waldhoer, Bernhard Stampfer, Christian Schleich, Tibor Grasser
Publikováno v:
Microelectronics Reliability. 126:114275
Variations in the operational behavior of seemingly identical transistors pose a remarkable challenge for application engineers as integrated circuits have to be designed to be resilient against process and aging-related error sources. In small-area
Autor:
Bernhard Loeffler, Andrea Kraxner, Martin Faccinelli, Peter Hadley, Evelin Fisslthaler, Frederic Roger, Rainer Minixhofer
Publikováno v:
IEEE Transactions on Electron Devices. 63:4395-4401
A 3-D electron-beam-induced current (EBIC) model was implemented in technology computer aided design simulations. The model uses a carefully designed charge carrier generation profile that describes how an electron beam induces charge carriers in a s
Autor:
Rainer Minixhofer, Karl Rupp, Hajdin Ceric, Yannick Wimmer, Hubert Enichlmair, Markus Bina, Stanislav Tyaginov, Prateek Sharma, Florian Rudolf, Jong Mun Park, Tibor Grasser
Publikováno v:
IEEE Transactions on Electron Devices. 62:1811-1818
We propose two different approaches to describe carrier transport in n-laterally diffused MOS (nLDMOS) transistor and use the calculated carrier energy distribution as an input for our physical hot-carrier degradation (HCD) model. The first version r
Autor:
R. L. de Orio, Jurgen Lorenz, Frederic Roger, Siegfried Selberherr, Peter Evanschitzky, Lado Filipovic, Eberhard Baer, Rainer Minixhofer
Publikováno v:
Microelectronic Engineering. 137:141-145
Display Omitted We investigated a TSV interconnect structure by means of simulation.Manufacturing and the operation of the TSV interconnect have been studied.The influence of the manufacturing process on TSV operation has been simulated. We demonstra
Publikováno v:
EMC Compo
An interchangeable black-box model of an integrated circuit block for time-domain simulations of the direct power injection (DPI) immunity test is presented. An artificial neural network implemented as a Verilog A module is used to build a model of a
Autor:
Oliver Triebl, Hubert Enichlmair, Ivan A. Starkov, Christoph Jungemann, Hajdin Ceric, Rainer Minixhofer, Johann Cervenka, Stanislav Tyaginov, Jong Mun Park, Markus Karner, Sara Carniello, E. Seebacher, Tibor Grasser, Ch. Kernstock
Publikováno v:
Microelectronics Reliability. 50:1267-1272
We refine our approach for hot-carrier degradation modeling based on a thorough evaluation of the carrier energy distribution by means of a full-band Monte–Carlo simulator. The model is extended to describe the linear current degradation over a wid
Autor:
Heimo Gensinger, Friedrich Peter Leisenberger, Martin Schrems, E. Seebacher, Hubert Enichlmair, Rainer Minixhofer, Ewald Wachmann, Gregor Schatzberger, Martin Knaipp, Verena Vescoli
Publikováno v:
e & i Elektrotechnik und Informationstechnik. 125:109-117
Integration of low voltage analog and logic circuits as well as high-voltage (HV) devices for operation at greater than 5 V enables Smart Power ICs used in almost any system that contains electronics. HVCMOS (High-Voltage CMOS) technologies offer muc
Publikováno v:
Microelectronics Reliability. 47:1439-1443
This paper presents the results of hot carrier stress experiments of a high voltage 0.35 μm n-channel lateral DMOS transistor. The stress induced degradation was investigated at different ambient temperatures over a wide range of both gate- and drai