Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Rainer Florian Schnabel"'
Autor:
David L. Rath, Rainer Florian Schnabel, T. Joseph, Kenneth P. Rodbell, Lynne Gignac, R. G. Filippi, X.J Ning, Chenming Hu, Gregory Costrini, Timothy D. Sullivan, Stefan Weber, G. Stojakovic, Lawrence A. Clevenger, Edward W. Kiewra, Roy C. Iggulden, M. Gribelyuk, R.V.S.S.N. Ravikumar, T. Kane, Jeff Gambino
Publikováno v:
Thin Solid Films. 388:303-314
The electromigration behavior and microstructural features of AlCu Dual Damascene lines are compared to those of AlCu metal reactively ion etched (RIE) lines. Test structures consist of 0.18-, 0.35- and 1.33-μm-wide lines terminated by W diffusion b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b7bc07472d1937181aff8531c7f159a
https://doi.org/10.1016/s0040-6090(01)00855-0
https://doi.org/10.1016/s0040-6090(01)00855-0
Autor:
Stefan Weber, Rainer Florian Schnabel, Lynne Gignac, Yun-Yu Wang, Lawrence A. Clevenger, R. C. Iggulden, J. L. Hurd, Ronald G. Filippi, Kenneth P. Rodbell
Publikováno v:
Journal of Applied Physics. 88:5093-5099
The microstructure was measured for AlCu lines, formed using either a traditional planar metal subtractive etch process or a newly developed hot AlCu-trench-damascene process. It was found that 0.35 μm wide damascene AlCu lines formed a large graine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d7584098554e4d50d269cc7ac237909
https://doi.org/10.1063/1.1314612
https://doi.org/10.1063/1.1314612
Autor:
Rainer Florian Schnabel, Kenneth P. Rodbell, Stefan Weber, Lynne Gignac, Lawrence A. Clevenger, R. C. Iggulden, J. L. Hurd, N. H. Schmidt
Publikováno v:
Applied Physics Letters. 72:326-328
The local texture in three types of patterned, thin-film, Al and AlCu interconnections on Si semiconductor devices is investigated by electron backscatter diffraction. Two types of standard planar metal structures were investigated: (1) blanket Al an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70f368cd088e1e84aa0c50db69c242f6
https://doi.org/10.1063/1.120726
https://doi.org/10.1063/1.120726
Autor:
J. L. Hurd, E.W. Kiewra, R. Ravikumar, R. Filippi, Stefan Weber, Roy C. Iggulden, L. Gignac, Kenneth P. Rodbell, Y. Y. Wang, C.-K. Hu, L. A. Clevenger, T. Kane, T. D. Sullivan, Rainer Florian Schnabel, T. Joseph
Publikováno v:
AIP Conference Proceedings.
Four different metallization processes for AlCu dual damascene are investigated with respect to their electromigration lifetime and compared to a metallization using subtractive metal etching. It is shown that the electromigration reliability lifetim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2597b741a5f75a404bdfd693baa9cb53
https://doi.org/10.1063/1.59917
https://doi.org/10.1063/1.59917