Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Rainer Butendeich"'
Autor:
Heribert Wankerl, Christopher Wiesmann, Laura Kreiner, Rainer Butendeich, Alexander Luce, Sandra Sobczyk, Maike Lorena Stern, Elmar Wolfgang Lang
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-11 (2022)
Abstract Over the last decades, light-emitting diodes (LED) have replaced common light bulbs in almost every application, from flashlights in smartphones to automotive headlights. Illuminating nightly streets requires LEDs to emit a light spectrum th
Externí odkaz:
https://doaj.org/article/1683e75217d94072bd89777bdf368dc9
Autor:
Rainer Butendeich, Alexander Linkov, Leray Olivier, Jun Jun Lim, Sandra Sobczyk, Ee Lian Jack Lee, Wee Jin Yeap, Christopher Wiesmann
Publikováno v:
Light-Emitting Devices, Materials, and Applications.
Autor:
Robert Rossbach, T. Ballmann, Heinz Schweizer, Rainer Butendeich, Michael Jetter, Ferdinand Scholz
Publikováno v:
Journal of Crystal Growth. 272:549-554
Measured power–current curves of 660 nm AlGaInP-based oxide-confined vertical-cavity surface-emitting lasers (VCSEL) are compared with calculated data by a cylindrical heat dissipation model to improve heat removal out of the device. Pulsed lasing
Autor:
Berthold Hahn, Matteo Meneghini, Enrico Zanoni, Rainer Butendeich, Gaudenzio Meneghesso, Augusto Tazzoli
Publikováno v:
IEEE Electron Device Letters. 31:579-581
This letter reports an extensive analysis of the degradation mechanisms of InGaN-based light-emitting diodes (LEDs) submitted to reverse-bias electrostatic discharge (ESD). The results of this analysis indicate that two different failure modes, namel
Publikováno v:
Journal of Crystal Growth. 221:657-662
In this work, we have investigated the design and metalorganic vapor-phase epitaxial growth of red vertical cavity surface-emitting lasers (VCSEL, emission wavelength around 650–680 nm) with respect to low threshold current densities and a reduced
Autor:
Ralph Wirth, K. Streubel, S. Illek, Siegmar Kugler, Rainer Butendeich, Reiner Windisch, Heribert Zull
Publikováno v:
IEEE Photonics Technology Letters. 19:774-776
Thin-film light-emitting diodes (LEDs) belong to the most successful LED concepts for achieving high efficiencies. The incorporation of buried microreflectors with inclined facets prevents the light generation under the top contact and bondpad and of
Autor:
Wolfgang Schmid, Marc Ilegems, Arndt Jaeger, R. P. Stanley, R. Joray, K. Streubel, Ralph Wirth, Rainer Butendeich
Publikováno v:
IEEE Photonics Technology Letters. 18:1052-1054
AlGaInP thin-film resonant cavity light-emitting diodes (RCLEDs) show an improved performance compared to standard red emitting RCLEDs. External quantum efficiencies at 650 nm of 23% and 18% with and without encapsulation, respectively, have been obt
Autor:
B. Raabe, Heinz Schweizer, F. Scholz, Rainer Butendeich, T. Ballmann, Robert Rossbach, Michael Jetter
Publikováno v:
IEEE Photonics Technology Letters. 18:583-585
Small-signal properties of 650-nm vertical-cavity surface-emitting lasers (VCSELs) with different oxide aperture sizes were measured. A small diameter VCSEL of 3.5 mum has a maximum resonance frequency of 5.7 GHz. The photon density determines the ma
Autor:
Davide Saguatti, Gaudenzio Meneghesso, Berthold Hahn, Rainer Butendeich, Enrico Zanoni, Giovanni Verzellesi, Luca Bidinelli, Matteo Meneghini
Efficiency-droop mechanisms and related technological remedies are critically analyzed in multi-quantum-well (QW) InGaN/GaN blue light-emitting diodes by means of numerical device simulations and their comparison with experimental data. Auger recombi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35c175841e440a14aae08b314467003e
http://hdl.handle.net/11577/2518071
http://hdl.handle.net/11577/2518071
Autor:
Augusto Tazzoli, Enrico Ranzato, Enrico Zanoni, Ulrich Zehnder, Berthold Hahn, Nicola Trivellin, Manfredo Manfredi, Maura Pavesi, Matteo Meneghini, Gaudenzio Meneghesso, Rainer Butendeich
This paper describes an extensive analysis of the degradation of InGaN-based LEDs submitted to reverse-bias stress and Electrostatic Discharge events. Results described within the paper indicate that: (i) reverse-bias current flows through localized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ee2b7217ef0262d448bfbbe6a9820ba
http://hdl.handle.net/11577/2466379
http://hdl.handle.net/11577/2466379