Zobrazeno 1 - 10
of 915
pro vyhledávání: '"Rainer, Waser"'
Autor:
Moritz L. Weber, Dylan Jennings, Sarah Fearn, Andrea Cavallaro, Michal Prochazka, Alexander Gutsche, Lisa Heymann, Jia Guo, Liam Yasin, Samuel J. Cooper, Joachim Mayer, Wolfgang Rheinheimer, Regina Dittmann, Rainer Waser, Olivier Guillon, Christian Lenser, Stephen J. Skinner, Ainara Aguadero, Slavomír Nemšák, Felix Gunkel
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-14 (2024)
Abstract Exsolution reactions enable the synthesis of oxide-supported metal nanoparticles, which are desirable as catalysts in green energy conversion technologies. It is crucial to precisely tailor the nanoparticle characteristics to optimize the ca
Externí odkaz:
https://doaj.org/article/68a0f614ecf94814ac8b7deb7c62164d
Autor:
Adnan Mehonic, Daniele Ielmini, Kaushik Roy, Onur Mutlu, Shahar Kvatinsky, Teresa Serrano-Gotarredona, Bernabe Linares-Barranco, Sabina Spiga, Sergey Savel’ev, Alexander G. Balanov, Nitin Chawla, Giuseppe Desoli, Gerardo Malavena, Christian Monzio Compagnoni, Zhongrui Wang, J. Joshua Yang, Syed Ghazi Sarwat, Abu Sebastian, Thomas Mikolajick, Stefan Slesazeck, Beatriz Noheda, Bernard Dieny, Tuo-Hung (Alex) Hou, Akhil Varri, Frank Brückerhoff-Plückelmann, Wolfram Pernice, Xixiang Zhang, Sebastian Pazos, Mario Lanza, Stefan Wiefels, Regina Dittmann, Wing H. Ng, Mark Buckwell, Horatio R. J. Cox, Daniel J. Mannion, Anthony J. Kenyon, Yingming Lu, Yuchao Yang, Damien Querlioz, Louis Hutin, Elisa Vianello, Sayeed Shafayet Chowdhury, Piergiulio Mannocci, Yimao Cai, Zhong Sun, Giacomo Pedretti, John Paul Strachan, Dmitri Strukov, Manuel Le Gallo, Stefano Ambrogio, Ilia Valov, Rainer Waser
Publikováno v:
APL Materials, Vol 12, Iss 10, Pp 109201-109201-59 (2024)
Externí odkaz:
https://doaj.org/article/f5e2e018db184cdfa86a6be24ff6f6e6
Publikováno v:
Advanced Physics Research, Vol 3, Iss 10, Pp n/a-n/a (2024)
Abstract The pressure‐driven Mott‐transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5%, and 15%. A change in resisti
Externí odkaz:
https://doaj.org/article/aa1878eb72bc410680ab149f2f19bc89
Autor:
Huijie Jiang, Ziyu Gao, Claudia Lubrano, Claudia Latte Bovio, Henning Bommes, Andrea Kauth, Lea Baumann, Bo Cheng, Divagar Murugan, Joachim Knoch, Rainer Waser, Sven Ingebrandt, Francesca Santoro, Vivek Pachauri
Publikováno v:
Biosensors and Bioelectronics: X, Vol 19, Iss , Pp 100487- (2024)
Metal-organic frameworks (MOFs) are an emerging class of nanomaterials with immense biomedical potential for their unique interactions with biological and organic materials. In this work, we select two candidate two-dimensional (2D) MOF systems based
Externí odkaz:
https://doaj.org/article/2dc48e5a6d0449d8b03f3867859dc77c
Autor:
Niclas Schmidt, Nico Kaiser, Tobias Vogel, Eszter Piros, Silvia Karthäuser, Rainer Waser, Lambert Alff, Regina Dittmann
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 4, Pp n/a-n/a (2024)
Abstract HfO2 is one of the most common memristive materials and it is widely accepted that oxygen vacancies are prerequisite to reduce the forming voltage of the respective memristive devices. Here, a series of six oxygen engineered substoichiometri
Externí odkaz:
https://doaj.org/article/ddb528388adf4513a1d5e4f9632d29f1
Autor:
Stephan Aussen, Felix Cüppers, Carsten Funck, Janghyun Jo, Stephan Werner, Christoph Pratsch, Stephan Menzel, Regina Dittmann, Rafal Dunin‐Borkowski, Rainer Waser, Susanne Hoffmann‐Eifert
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)
Abstract Memristive devices with valence change mechanism (VCM) show promise for neuromorphic data processing, although emulation of synaptic behavior with analog weight updates remains a challenge. Standard filamentary and area‐dependent resistive
Externí odkaz:
https://doaj.org/article/8b639190850c49efb86ded3ce98fdd86
Autor:
Henrik Wördenweber, Silvia Karthäuser, Annika Grundmann, Zhaodong Wang, Stephan Aussen, Holger Kalisch, Andrei Vescan, Michael Heuken, Rainer Waser, Susanne Hoffmann-Eifert
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Metal-free chemical vapor deposition (CVD) of single-layer graphene (SLG) on c-plane sapphire has recently been demonstrated for wafer diameters of up to 300 mm, and the high quality of the SLG layers is generally characterized by integral m
Externí odkaz:
https://doaj.org/article/7e7775063c2b42a5ab20cdb8671c41c2
Autor:
Rana Walied Ahmad, Rainer Waser, Florian Maudet, Onur Toprak, Catherine Dubourdieu, Stephan Menzel
Publikováno v:
Neuromorphic Computing and Engineering, Vol 4, Iss 3, p 034007 (2024)
Resistively switching electrochemical metallization memory cells are gaining huge interest since they are seen as promising candidates and basic building blocks for future computation-in-memory applications. However, especially filamentary-based memr
Externí odkaz:
https://doaj.org/article/a60b6be5ef684fcb9c61e5a1a7c2943a
Autor:
Nils Kopperberg, Stefan Wiefels, Karl Hofmann, Jan Otterstedt, Dirk J. Wouters, Rainer Waser, Stephan Menzel
Publikováno v:
IEEE Access, Vol 10, Pp 122696-122705 (2022)
In this work, we experimentally characterize the endurance of 2 Mbit resistive switching random access memories (ReRAMs) from a 16 MBit test-chip. Here, very rare failure events where the memory cells become stuck in the low-resistive state (LRS) are
Externí odkaz:
https://doaj.org/article/b226f2953f1b4a699407c9714427a910
Publikováno v:
International Journal of Ceramic Engineering & Science, Vol 5, Iss 2, Pp n/a-n/a (2023)
Abstract The proton conductivity of Y‐doped BaZrO3‐based ceramic (BZY) films is highly dependent on the preparation process, especially thermal treatment. In order to further improve the electrochemical properties of BZY thin films, a novel sinte
Externí odkaz:
https://doaj.org/article/e0ce179f60e2456990585e91851d80f3