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pro vyhledávání: '"Raina Jang"'
Autor:
Chirag Gupta, Nirupam Hatui, Aditya Raj, Stacia Keller, Athith Krishna, Raina Jang, Umesh K. Mishra
Publikováno v:
IEEE Electron Device Letters. 41:220-223
In this letter, we report on the demonstration of a Mg-doped GaN/Al0.2Ga0.8N superlattice (SL) based depletion mode p-channel FinFET to improve the on current (ION). A two-step approach involving a dry etch followed by a Tetramethylammonium hydroxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a2a3f6f31383c1451fe0614fa6f8d7
https://doi.org/10.1109/led.2019.2963428
https://doi.org/10.1109/led.2019.2963428
