Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Raija Matero"'
Publikováno v:
ECS Transactions. 13:453-457
A remarkably high growth rate of more than 1 Aå/cycle was obtained when using a new aminosilane precursor AHEAD{trade mark, serif} for atomic layer deposition of SiO2 thin films. The films were deposited at 150 - 300 {degree sign}C on 200 mm wafers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56c38bc1f2ebb693acbfbd1f45a51754
https://doi.org/10.1149/1.2911529
https://doi.org/10.1149/1.2911529
Publikováno v:
ECS Transactions. 1:131-135
Niobium nitride NbN and niobium silicon nitride Nb(Si)N were deposited by Atomic Layer Deposition (ALD) from niobium pentachloride NbCl5, silicon tetrachloride SiCl4, and ammonia NH3. It was shown that low resistivity NbN can be more readily processe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f522e2ac5b92882abec3a19062f2d65
https://doi.org/10.1149/1.2209338
https://doi.org/10.1149/1.2209338
Autor:
Antti Rahtu, Markku Leskelä, Timo Hatanpää, Mikko Ritala, Marko Vehkamäki, Raija Matero, Suvi Haukka, Marko Tuominen
Publikováno v:
ECS Transactions. 1:137-141
BaTiO3 films were deposited onto 200 mm silicon wafers by Atomic Layer Deposition (ALD) from barium bis(tris(tert-butyl) cyclopentadienyl) Ba(tBu3CpH2)2, titanium methoxide Ti(OMe)4 and water H2O. The films were characterized for thickness uniformity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae85e412c57dd833cd87542deec44906
https://doi.org/10.1149/1.2209339
https://doi.org/10.1149/1.2209339
In Situ Reaction Mechanism Studies on the Atomic Layer Deposition of Al2O3 from (CH3)2AlCl and Water
Publikováno v:
Langmuir. 21:3498-3502
Reaction mechanisms between dimethylaluminum chloride and deuterated water in the atomic layer deposition (ALD) of Al2O3 were studied at 150-400 degrees C using a quartz crystal microbalance (QCM) and a quadrupole mass spectrometer (QMS). The observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9d0a0cbe18cc94be4acefb1909355d5
https://doi.org/10.1021/la047153a
https://doi.org/10.1021/la047153a
Autor:
Markku Leskelä, John L. Roberts, Raija Matero, Timo Sajavaara, Anthony C. Jones, Mikko Ritala
Publikováno v:
Chemistry of Materials. 16:5630-5636
Atomic layer deposition (ALD) was used for growing zirconium dioxide (ZrO2) thin films by alternate surface reactions between new aminoalkoxides and water. The zirconium aminoalkoxide precursors were Zr(dmae)4, Zr(dmae)2(OtBu)2, and Zr(dmae)2(OiPr)2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8cec918df27eea1f48de9dd1a944299
https://doi.org/10.1021/cm030669f
https://doi.org/10.1021/cm030669f
Autor:
Hywel O. Davies, Raija Matero, Markku Leskelä, Jamie F. Bickley, Alexander Steiner, Paul A. Williams, Anthony C. Jones, Timothy J. Leedham, Mikko Ritala
Publikováno v:
Journal of Non-Crystalline Solids. 303:24-28
Zirconium oxide thin films were grown by atomic layer deposition using a new type of Zr alkoxide: [Zr(O t Bu) 2 (dmae) 2 ] 2 (dmae is dimethylaminoethoxide). Water was used as the oxygen source. The films grown at 190–240 °C were amorphous, and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8219c99516f4ed4eba391f46875b345
https://doi.org/10.1016/s0022-3093(02)00959-6
https://doi.org/10.1016/s0022-3093(02)00959-6
Publikováno v:
Chemistry of Materials. 13:4506-4511
The atomic layer deposition (ALD) of TiO2 from TiCl4 and D2O at 150−400 °C was studied in situ with a quadrupole mass spectrometer (QMS) and a quartz crystal microbalance (QCM). The ALD growth proceeds via exchange reactions on the film surface. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31c9c217706341e72494a7e9590b8614
https://doi.org/10.1021/cm011046+
https://doi.org/10.1021/cm011046+
Publikováno v:
Journal of Crystal Growth. 212:459-468
Ta 2 O 5 films were grown in atomic layer deposition (ALD) process on barium borosilicate glass substrates in the temperature range of 300–400°C from TaCl 5 and H 2 O. The film crystallinity was modified by precursor dosing and substrate temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdd1a056f148254434e266be42cf743d
https://doi.org/10.1016/s0022-0248(00)00331-6
https://doi.org/10.1016/s0022-0248(00)00331-6
Publikováno v:
Applied Physics A: Materials Science & Processing. 68:339-342
thin films. The study showed that by applying very thin film (30 nm SnO2 in this study) the transducer influences on force sensing can be neglected. However, even much thicker (470 nm SnO2) overlayers can be used if the coating influence on the optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13c63737850d4257c068f4523972b6f2
https://doi.org/10.1007/s003390050899
https://doi.org/10.1007/s003390050899
Publikováno v:
Chemical Vapor Deposition. 2:277-283
AIN thin films were grown by an alternate supply of trimethyl aluminum (TMA) and ammonia, i.e., according to the processing scheme of the atomic layer epitaxy (ALE) technique. In contrast with the ideal ALE process, no saturation of the growth rate w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e365a14f53b442082e83e208fc1c7e0
https://doi.org/10.1002/cvde.19960020612
https://doi.org/10.1002/cvde.19960020612