Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Rai, Raghaw S."'
Publikováno v:
In Progress in Crystal Growth and Characterization of Materials 2009 55(3):63-97
Theoretical and Experimental Investigation of Thermal Stability of HfO2 /Si and HfO2 /SiO2 Interfaces.
Publikováno v:
MRS Online Proceedings Library; 2002, Vol. 731 Issue 1, p1-4, 4p
Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2.
Autor:
Gutowski, Maciej, Jaffe, John E., Liu, Chun-Li, Stoker, Matt, Hegde, Rama I., Rai, Raghaw S., Tobin, Philip J.
Publikováno v:
MRS Online Proceedings Library; 2002, Vol. 716 Issue 1, p1-5, 5p
Publikováno v:
Journal of the American Ceramic Society; 1990, Vol. 73 Issue 3, p615-620, 6p
Publikováno v:
Journal of the American Ceramic Society; 1988, Vol. 71 Issue 4, p236-244, 9p
Autor:
Gutowski, Maciej, Jaffe, John E., Liu, Chun-Li, Stoker, Matt, Hegde, Rama I., Rai, Raghaw S., Tobin, Philip J.
Publikováno v:
Applied Physics Letters; 3/18/2002, Vol. 80 Issue 11, p1897, 3p, 1 Diagram, 1 Chart, 1 Graph
Autor:
Schraub, David M., Rai, Raghaw S.
Publikováno v:
In Progress in Crystal Growth and Characterization of Materials 1998 36(1):99-122
Publikováno v:
Périodiques Scientifiques en Édition Électronique.
Crystal structure of a large period polytype as well as some complex polytypes like 40H, 150R, and their intergrowth structures have been determined on the basis of one dimensional lattice images and confirmed finally by establishing a match between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94df3fba91e0ab00c8294fc70f13d949
https://www.persee.fr/doc/bulmi_0180-9210_1986_num_109_5_7955
https://www.persee.fr/doc/bulmi_0180-9210_1986_num_109_5_7955
Autor:
Richard J. Ross
This updated reference book, prepared by experts in their fields, contains dozens of articles covering a wide range of topics involving the failure analysis of microelectronics. It places the most important and up-to-date information on this subject
