Zobrazeno 1 - 10
of 108
pro vyhledávání: '"Rai, Amritesh"'
Autor:
Roy, Anupam, Dey, Rik, Pramanik, Tanmoy, Rai, Amritesh, Schalip, Ryan, Majumder, Sarmita, Guchhait, Samaresh, Banerjee, Sanjay K
Publikováno v:
Phys. Rev. Materials 4, pp. 025001 (2020)
Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in scanning
Externí odkaz:
http://arxiv.org/abs/2003.01199
Autor:
Zhou, Yongjian, Maity, Nikhilesh, Rai, Amritesh, Juneja, Rinkle, Meng, Xianghai, Roy, Anupam, Xu, Xiaochuan, Lin, Jung-Fu, Banerjee, Sanjay, Singh, Abhishek K., Wang, Yaguo
Two distinct stacking orders in ReS2 are identified without ambiguity and their influence on vibrational, optical properties and carrier dynamics are investigated. With atomic resolution scanning transmission electron microscopy (STEM), two stacking
Externí odkaz:
http://arxiv.org/abs/2001.07308
Autor:
Wu, Di, Li, Wei, Rai, Amritesh, Wu, Xiaoyu, Movva, Hema C. P., Yogeesh, Maruthi N., Chu, Zhaodong, Banerjee, Sanjay K., Akinwande, Deji, Lai, Keji
Publikováno v:
Nano Letters, 2019
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel prop
Externí odkaz:
http://arxiv.org/abs/1902.08147
Autor:
Tran, Kha, Moody, Galan, Wu, Fengcheng, Lu, Xiaobo, Choi, Junho, Singh, Akshay, Embley, Jacob, Zepeda, André, Campbell, Marshall, Kim, Kyounghwan, Rai, Amritesh, Autry, Travis, Sanchez, Daniel A., Taniguchi, Takashi, Watanabe, Kenji, Lu, Nanshu, Banerjee, Sanjay K., Tutuc, Emanuel, Yang, Li, MacDonald, Allan H., Silverman, Kevin L., Li, Xiaoqin
In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moir\'e superlattice. While it is widely recognized that a moir\'e superlattice can modulate t
Externí odkaz:
http://arxiv.org/abs/1807.03771
Autor:
Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C P, Meng, Xianghai, He, Feng, Banerjee, Sanjay, Wang, Yaguo
Defect-carrier interaction in transition metal dichalcogenides (TMDs) play important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy
Externí odkaz:
http://arxiv.org/abs/1801.02220
Autor:
Chen, Ke, Roy, Anupam, Rai, Amritesh, Valsaraj, Amithraj, Meng, Xianghai, He, Feng, Xu, Xiaochuan, Register, Leonard F., Banerjee, Sanjay, Wang, Yaguo
Understanding defect effect on carrier dynamics is essential for both fundamental physics and potential applications of transition metal dichalcogenides. Here, the phenomenon of oxygen impurities trapping photo-excited carriers has been studied with
Externí odkaz:
http://arxiv.org/abs/1710.05372
The phosphorous activation in Ge n$^{+}$/p junctions is compared in terms of junction depth, by using laser spike annealing at 860{\deg}C for 400$\mu$s. The reverse junction leakage is found to strongly depend on the abruptness of dopant profiles. A
Externí odkaz:
http://arxiv.org/abs/1705.06733
Autor:
Pramanik, Tanmoy, Roy, Anupam, Dey, Rik, Rai, Amritesh, Guchhait, Samaresh, Movva, Hema CP, Hsieh, Cheng-Chih, Banerjee, Sanjay K
We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong secon
Externí odkaz:
http://arxiv.org/abs/1705.03121
Autor:
Roy, Anupam, Ghosh, Rudresh, Rai, Amritesh, Sanne, Atresh, Kim, Kyounghwan, Movva, Hema C. P., Dey, Rik, Pramanik, Tanmoy, Chowdhury, Sayema, Tutuc, Emanuel, Banerjee, Sanjay K.
Publikováno v:
Appl. Phys. Lett. 110, 201905 (2017)
We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged in
Externí odkaz:
http://arxiv.org/abs/1705.03051
Autor:
Dey, Rik, Roy, Anupam, Pramanik, Tanmoy, Rai, Amritesh, Shin, Seung Heon, Majumder, Sarmita, Register, Leonard F., Banerjee, Sanjay K.
Publikováno v:
Applied Physics Letters 110, 122403 (2017)
We electrically detect charge current induced spin polarization on the surface of molecular beam epitaxy grown Bi$_2$Te$_3$ thin film in a two-terminal device with a ferromagnetic MgO/Fe and a nonmagnetic Ti/Au contact. The two-point resistance, meas
Externí odkaz:
http://arxiv.org/abs/1704.02031