Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Rahmi Hezar"'
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 67:815-828
A high efficiency multi-mode class-E outphasing RF power amplifier (PA) with a passive combining circuit is presented. The multi-mode PA combines multiple class-E amplifier branches and can work in different configurations. The PA improves efficiency
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 64:1977-1988
A CMOS class-E outphasing RF power amplifier is presented with a new passive combining circuit that provides high efficiency and high output power. An efficiency enhancement circuit and a power enhancement circuit are proposed as part of the combiner
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:1107-1116
In this paper, we present a 25 dBm Class-D outphasing power amplifier (PA) with cross-bridge combiners. The Class-D PA is designed in a standard 45 nm process while the combiner is implemented on board using lumped elements for flexibilities in testi
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:1117-1125
In this paper, we present a 23 dBm PWM based fully digital transmitter designed in standard 45 nm CMOS process. The digital transmitter utilizes sigma-delta modulation and pulse-width modulation to convert high resolution baseband I and Q signals int
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
Digital transmitters based on delta-sigma modulation (DSM) and pulse-width modulation (PWM) are very active research areas because of their potential for achieving better integrated, lower cost, and higher efficiency communication devices. To achieve
Publikováno v:
IEEE Journal of Solid-State Circuits. 46:2892-2903
A new digital signal processing approach to shaping intersymbol interference (ISI) and static mismatch errors simultaneously in oversampled multi-level digital to analog converters (DAC) has recently been proposed. In this paper, a mathematical frame
Publikováno v:
ESSCIRC
Publikováno v:
CICC
Integration of RF power amplifier (PA) in CMOS technology can help to reduce total solution cost and achieve small form factor in modern communication systems. To improve overall efficiency of the power amplifier supporting modulated signals with ver
Publikováno v:
ESSCIRC
Publikováno v:
2014 IEEE Radio Frequency Integrated Circuits Symposium.
This paper presents a 25 dBm outphasing power amplifier designed in a standard 45 nm CMOS process. Instead of using bulky quarter-wave transmission lines or transformers as non-isolated combiners, we propose a new combiner based on lump elements. The