Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Rahim Kavari"'
Autor:
T. Hsu, L. A. Wills, G. Xing, Scott R. Summerfelt, M. W. Russell, D. J. Vestcyk, Rahim Kavari, Theodore S. Moise, S. T. Johnson, Tomoyuki Sakoda, Stephen R. Gilbert, S. Ma, Alvin Leng Sun Loke, Jun Amano, S. M. Bilodeau, Luigi Colombo, P. C. van Buskirk
Publikováno v:
Applied Physics Letters. 79:4004-4006
The measured switched polarization properties of integrated Pb(Zr,Ti)O3 (PZT) capacitors arrays have been found to show a small dependence on individual capacitor size in the range from 0.17 and 100 μm2. These thin (90 nm) PZT capacitors have low vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e831717d7d023f226d263e97d0aae47
https://doi.org/10.1063/1.1423789
https://doi.org/10.1063/1.1423789
Autor:
Stephen T. Johnston, Daniel J. Vestyck, Jun Amano, Stephen R. Gilbert, Luigi Colombo, Rahim Kavari, G. Xing, S. R. Summerfelt, M. W. Russell, Alvin Leng Sun Loke, Tomoyuki Sakoda, S. M. Bilodeau, Theodore S. Moise, T. Hsu, L. A. Wills, S. Ma
Publikováno v:
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
Summary form only given. High-density, embedded ferroelectric memory (FeRAM) has the potential to replace embedded flash, embedded DRAM, and non-cache SRAM and could be a key enabler for future system-on-a-chip applications. Despite this appeal, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda3649d988a789a71051253276fbfb6
https://doi.org/10.1109/iedm.1999.824305
https://doi.org/10.1109/iedm.1999.824305
Autor:
Changsup Ryu, Kee-Won Kwon, Rahim Kavari, Alvin Leng Sun Loke, G.W. Ray, S. Simon Wong, Valery M. Dubin
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
Summary form only given. This paper compares the microstructure and reliability of submicron Damascene CVD and electroplated Cu interconnects. For CVD Cu, the electromigration lifetime degrades in the deep submicron range due to fine grains constrain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d50826840d15b9b80308f784aae69d1e
https://doi.org/10.1109/vlsit.1998.689238
https://doi.org/10.1109/vlsit.1998.689238
Autor:
Rahim Kavari, Luigi Colombo, S. Ma, Stephen R. Gilbert, J. Amano, S. R. Summerfelt, L. A. Wills, Alvin Leng Sun Loke, Tomoyuki Sakoda, G. Xing, Theodore S. Moise
Publikováno v:
Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92696a22d437b0fc45a0399b6d2a2282
https://doi.org/10.7567/ssdm.2000.c-3-2
https://doi.org/10.7567/ssdm.2000.c-3-2
Autor:
Alvin Leng Sun Loke, Scott R. Summerfelt, Rahim Kavari, Tomoyuki Sakoda, Stephen R. Gilbert, Luigi Colombo, Jun Amano, Guoqiang Xing, Shawming Ma, Theodore S. Moise, Laura A. Wills
Publikováno v:
Japanese Journal of Applied Physics. 40:2911
We have demonstrated that the scaling of IrO x (Pb(Zr, Ti)O3:PZT)/Ir capacitors can be extended into the submicron regime. The submicron IrO x /PZT/Ir capacitors were fabricated using a one-mask stack-etch process, integrated with an SiO2 interlayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb20f44007e08c80b1ea6e2af3da3f34
https://doi.org/10.1143/jjap.40.2911
https://doi.org/10.1143/jjap.40.2911