Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Rahim Kasim"'
Autor:
Rahim Kasim, Mauro J. Kobrinsky
Publikováno v:
IRPS
In this paper, we describe both evolutionary and disruptive Back End Of Line innovations needed to enable scaling and performance improvements, and their reliability impact.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fae87c066c7a88122badf309f9b5e34
https://doi.org/10.1109/irps46558.2021.9405099
https://doi.org/10.1109/irps46558.2021.9405099
Autor:
Rahim Kasim, Madhavan Atul, D. Kencke, J. R. Weber, G. W. Zhang, C. Perini, J. Palmer, C.-Y. Lin
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
This paper focuses on the study of Co/Low-k dielectric TDDB (Time Dependent Dielectric Breakdown) in Intel’s 10nm process technology. We demonstrate that 36nm/40nm pitch Cobalt interconnects with Low-k dielectric successfully meet our technology TD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::232c91f3c0fe0e281415abfd3e8b9651
https://doi.org/10.1109/iitc47697.2020.9515670
https://doi.org/10.1109/iitc47697.2020.9515670
Autor:
D. Towner, C. Ryder, M. A. Blount, C. Auth, K. Sethi, J. R. Weber, Che-Yun Lin, U. E. Avci, A. J. Welsh, C. M. Pelto, A. Kundu, R. Grover, Rahim Kasim, D. Seghete, A. Schmitz, J. Hicks
Publikováno v:
IRPS
We present a high density MIM decoupling capacitor that enables improved microprocessor performance by providing robust on-chip power supply droop reduction. The MIM dielectric is fabricated using ALD-deposited HfO 2 -Al 2 O 3 and HfO 2 -ZrO 2 high-k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb161d96fcf1b5e26d60236c1615071
https://doi.org/10.1109/irps45951.2020.9128312
https://doi.org/10.1109/irps45951.2020.9128312
Autor:
Benjamin J. Orr, Nathan Jack, C. Auth, A. Schmitz, Tony Acosta, Steven S. Poon, Che-Yun Lin, Abdur Rahman, C. AnDyke, Rahim Kasim, K. Downes, G. McPherson, Sunny Chugh, Madhavan Atul, D. Nminibapiel, Adam Neale, K. Sethi, Seung Hwan Lee, S. Ramey, Tanmoy Pramanik, Michael L. Hattendorf, Emre Armagan, J. Palmer, Subhash M. Joshi, Ian R. Post, C. M. Pelto, P. Nayak, Yeoh Andrew W, G. Martin, Gerald S. Leatherman, H. Wu, N. Seifert, A. Lowrie, R. Grover, H. Mao
Publikováno v:
IRPS
We provide a comprehensive overview of the reliability characteristics of Intel’s 10+ logic technology. This is a 10 nm technology featuring the third generation of Intel’s FinFETs, seventh generation of strained silicon, fifth generation of high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e7a8286d09b3f3bfcb1c27f6a51e61
https://doi.org/10.1109/irps45951.2020.9128345
https://doi.org/10.1109/irps45951.2020.9128345
Autor:
Rahim Kasim, J. Palmer, A. Schmitz, I. Tsameret, F. Pan, C. Auth, Flavio Griggio, Yeoh Andrew W, Gerald S. Leatherman, Joseph M. Steigerwald, J. Hicks, J. Shin, A. Madhavan, N. Toledo
Publikováno v:
IRPS
This paper discusses the reliability of a new metallization scheme for 10nm back end of line (BEOL) local interconnect. Electromigration (EM) and time dependent dielectric breakdown (TDDB) on cobalt fill interconnects are investigated. Significant in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58d63251175c58f96eca878418f6167f
https://doi.org/10.1109/irps.2018.8353641
https://doi.org/10.1109/irps.2018.8353641
Publikováno v:
Advanced Materials Research. :1503-1507
In this work, we present the development of MEMS switch array and ZnO nanowire-based sensor technology to detect multiple analytes in a sensitive manner. A novel approach that incorporates the advantages of MEMS technology with highly sensitive ZnO n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e36cca04149c06e5e6ba5b6540568a37
https://doi.org/10.4028/www.scientific.net/amr.774-776.1503
https://doi.org/10.4028/www.scientific.net/amr.774-776.1503
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2011:000926-000951
This paper provides development of MEMS switches and packaging of MEMS to test radio frequency circuits used in wireless products such as cell phones and network routers. We discuss fabrication of MEMS using low voltage magnetic materials and their c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231de4e90260362853abc029c3371e64
https://doi.org/10.4071/2011dpc-tp24
https://doi.org/10.4071/2011dpc-tp24
Autor:
Rahim Kasim, Bruce Kim
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2010:001808-001840
This article presents the design, fabrication, and packaging of advanced MEMS in high power applications. The advanced MEMS devices are used as a power sensor to detect high current in a distributed power network. We designed and fabricated an M × N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a506882bbe970f72418715d1e08e0d78
https://doi.org/10.4071/2010dpc-wp22
https://doi.org/10.4071/2010dpc-wp22
Autor:
Patel Reken, P. Plekhanov, S. Rajamani, P. Reese, Conor P. Puls, Muhammet Uncuer, Rahim Kasim, E. Hwang, M. Agostinelli, M. Bost, Swaminathan Sivakumar, S. Nigam, Sanjay Natarajan, P. Charvat, S. Kosaraju, M. Prince, D. Rao, B. Song, M. Yang, S. Williams, P. Yashar, K. S. Lee, Pulkit Jain, I. Jin, Q. Fu, H. Hiramatsu, Kevin J. Fischer, Max M. Heckscher, R. McFadden, V. Chikarmane, Haran Mohit K, A. Rosenbaum, Huichu Liu, D. Bahr, C. Ganpule, C. Pelto, C. Allen
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
We describe here Intel's 14nm high-performance logic technology interconnects and back end stack featuring 13 metal layers and a tri-metal laminated metal-insulator-metal (MIM) capacitor. For the first time on a logic product in high volume, multiple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5878d1ee61e8d33e2cf853ee2454b701
https://doi.org/10.1109/iitc-mam.2015.7325600
https://doi.org/10.1109/iitc-mam.2015.7325600
Autor:
John J. Plombon, Hui Jae Yoo, Narendra Lakamraju, Colin T. Carver, B. Krist, Rahim Kasim, Kanwal Jit Singh, Tejaswi K. Indukuri, Jasmeet S. Chawla, Kevin L. Lin, James S. Clarke, Mauro J. Kobrinsky, J. Bielefeld, Hazel Lang, Kabir Nafees, M. Harmes, Jessica M. Torres, E. Mays, Jacob Faber, Christopher J. Jezewski, Alan Myers, Ramanan V. Chebiam
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
Planar capacitors can quickly test material properties of metals and dielectrics for interconnects. A sidewall capacitor device is used to evaluate metal thin-film barriers. Etch stop planar capacitors in turn can test multi-layer etch stops, exposin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47dcd35f8378b2ae8fafb82d3251683
https://doi.org/10.1109/iitc-mam.2015.7325646
https://doi.org/10.1109/iitc-mam.2015.7325646