Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Rahim Faez"'
Publikováno v:
مجله مدل سازی در مهندسی, Vol 17, Iss 58, Pp 113-126 (2019)
Using multi transmission line (MTL) model, a compact circuit model for mixed multiwall carbon nanotube (MMWCNT) interconnects is proposed. Using the proposed circuit model, an algorithmic model is proposed for calculating the transfer matrix of these
Externí odkaz:
https://doaj.org/article/40be3cd149cc4e1c86b7bc0b6b33fe8b
Autor:
Maedeh Akbari Eshkalak, Rahim Faez
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 2, Iss 3, Pp 1-12 (2017)
Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Ef
Externí odkaz:
https://doaj.org/article/a066efa64861484299d6fc3c5a16688e
Publikováno v:
AIP Advances, Vol 6, Iss 9, Pp 095010-095010-7 (2016)
In this paper, a silicon–on–insulator (SOI) p–n–p–n tunneling field–effect transistor (TFET) with a silicon doped hafnium oxide (Si:HfO2) ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated non
Externí odkaz:
https://doaj.org/article/5d7a45d32619440f99491d68eec2d707
Publikováno v:
Journal of Electronic Materials. 52:2544-2552
Autor:
Ashkan Horri, Rahim Faez
Publikováno v:
ACS Applied Electronic Materials. 4:3520-3524
Publikováno v:
Journal of Computational Electronics.
Autor:
Ashkan Horri, Rahim Faez
Publikováno v:
International Journal of Modelling and Simulation. 42:775-781
In this paper, we present a computational study on the electrical behaviour of self-switching transistors (SSTs) based on InGaAs/InP heterojunction. Our simulation is based on the solution of Poiss...
Publikováno v:
IEEE Transactions on Electron Devices. 67:1334-1339
Our aim is to improve the switching performance of the graphene nanoribbon field-effect transistors (GNRFETs), exploiting the concept of energy filtering. Within the proposed scheme, a superlattice (SL) structure is used in the source of the transist
Publikováno v:
IEEE Transactions on Electron Devices. 66:5339-5346
This article presents a novel armchair graphene nanoribbon (AGNR) field-effect transistor with engineered nanopores for resonant tunneling. Two rectangular nanopores are punched to create two potential barriers and one quantum well. Channel and sourc
Publikováno v:
Journal of Computational Electronics. 19:137-146
Using a tight-binding approach and first-principles calculations combined with the nonequilibrium Green’s function method, the thermal spin transport in a zigzag molybdenum disulfide ($$\hbox{MoS}_2$$) nanoribbon in the proximity of a ferromagnetic