Zobrazeno 1 - 10
of 466
pro vyhledávání: '"Raghuveer R"'
Autor:
Krishnakanth Talapanti, Raghuveer R. Puskur, S. R. Voleti, C. N. Neeraja, Surekha Kuchi, Sonali Bej, Subrahmanyam Desiraju
Publikováno v:
Molecular Breeding for Rice Abiotic Stress Tolerance and Nutritional Quality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ce98a4af2b45a7484649a06977c4b1a
https://doi.org/10.1002/9781119633174.ch12
https://doi.org/10.1002/9781119633174.ch12
Autor:
Raghuveer R, Gopal V
The most pervasive problems today include the burden of disease and its complexities. While diabetes is not an infectious disease, it is caused by a healthy diet and bad eating habits. The causes of diabetes are unhealthy dietary patterns, attributab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::086f665277beda23824ff7a8657c6056
https://zenodo.org/record/7213287
https://zenodo.org/record/7213287
Autor:
Robert Ardecky, Daniela G. Dengler, Kaleeckal G. Harikumar, Mathew M. Abelman, Jiwen Zou, Bryan A. Kramer, Santhi Reddy Ganji, Steve Olson, Alina Ly, Nikhil Puvvula, Chen-Ting Ma, Raghuveer Ramachandra, Eduard A. Sergienko, Laurence J. Miller
Publikováno v:
SLAS Discovery, Vol 29, Iss 6, Pp 100176- (2024)
Agonists of the secretin receptor have potential applications for diseases of the cardiovascular, gastrointestinal, and metabolic systems, yet no clinically-active non-peptidyl agonists of this receptor have yet been developed. In the current work, w
Externí odkaz:
https://doaj.org/article/3eddfc13db42404aa4f87b29244f0ab2
Autor:
Subhker Katta, Sireesha Srinivas Rao, Raghuveer Raju Boosa, Omesh Elukapally, Umashamkar Molanguri, Sai Bhavana
Publikováno v:
Telangana Journal of Psychiatry, Vol 10, Iss 1, Pp 55-60 (2024)
Background: While expressed emotions (EEs) have been extensively explored in schizophrenia, there is a notable scarcity of literature concerning their study in bipolar affective disorder (BPAD). Few studies have directly compared EEs in these two psy
Externí odkaz:
https://doaj.org/article/1c9f1894b05548e4abc038a54e86fdd4
Autor:
Virat Mehta, Devika Sil, V. Katragadda, E. R. Evarts, J. DeBrosse, Sanjay Mehta, Richard G. Southwick, C. Long, Abraham Arceo, Dominik Metzler, Theodorus E. Standaert, A. Gasasira, C.-C. Yang, Son Nguyen, Raghuveer R. Patlolla, P. Nieves, D. Houssameddine, E. R. J. Edwards, V. Pai, Thomas M. Maffitt, Daniel C. Worledge, Michael Rizzolo, James Chingwei Li, O. van der Straten, J. Fullam, J. Morillo, Yaocheng Liu, Heng Wu, R. Johnson, Chu Isabel Cristina, J. M. Slaughter, T. Levin, S. McDermott, R. Pujari, Guohan Hu, James J. Demarest, Daniel C. Edelstein, Ashim Dutta, Yutaka Nakamura, M. Iwatake, M.R. Wordeman
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We present the first Embedded Spin-Transfer-Torque MRAM (eMRAM) technology in a 14 nm CMOS node. A novel integration supports the highest eMRAM density (0.0273 um2 cell size), optimal magnetic tunnel junction (MTJ) placement between M1-M2 for perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bd1db9bbbe44a73b965abe369e8b585
https://doi.org/10.1109/iedm13553.2020.9371922
https://doi.org/10.1109/iedm13553.2020.9371922
Autor:
Juntao Li, Yasir Sulehria, Nicholas A. Lanzillo, Devika Sil, Joe Lee, James J. Kelly, Raghuveer R. Patlolla, Hosadurga Shobha, Anuja DeSilva, Prasad Bhosale, Takeshi Nogami, Oleg Gluschenkov, Lawrence A. Clevenger, Son Nguyen, Jennifer Church, Huai Huang, Balasubramanian S. Haran, Yann Mignot, James J. Demarest, Andrew H. Simon, Brown Peethala Dan Edelstein
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Feasibility of single damascene Cu BEOL nanowires with TaN/Ta barrier (i.e. omitting a CVD-Co liner) was studied. Successful Cu gap-fill in 36 nm pitch trenches demonstrated 30% line resistance (Line-R) reduction vs. leading-edge Cu with conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b22fcf1415d54c5bfb077d80ab9af1cc
https://doi.org/10.1109/iitc47697.2020.9515628
https://doi.org/10.1109/iitc47697.2020.9515628
Autor:
Donald F. Canaperi, B. Peethala, Motoyama Koichi, Raghuveer R. Patlolla, Theodorus E. Standaert, Nicole Saulnier
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:P397-P401
For better gap fill in beyond 56nm pitch Cu interconnect structures, Ru liner is one of the most promising solutions with better coverage and wettability. In this paper several new challenges in Ru CMP specific to ≤ 48nm pitch structures (also call
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6004245415f6126004f032b8d5e867f
https://doi.org/10.1149/2.0181808jss
https://doi.org/10.1149/2.0181808jss
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
John H. Zhang, Xie Ruilong, C. Labelle, Charan V. V. S. Surisetty, Pietro Montanini, Soon-Cheon Seo, Stan D. Tsai, Andrew M. Greene, Haigou Huang, Qiang Fang, Donald F. Canaperi, Wei-Tsu Tseng, Dinesh Koli, Walter Kleemeier, Dechao Guo, Jean E. Wynne, Matthew Malley, Raghuveer R. Patlolla
Publikováno v:
MRS Advances. 2:2361-2372
The CMP challenges for advanced technology nodes are discussed. Global and local uniformity challenges and their cumulative effects are presented. Uniformity improvements for advanced node integration were achieved through slurry, pad and platen opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fce8e5248f0301b5e58822582fa2b90c
https://doi.org/10.1557/adv.2017.366
https://doi.org/10.1557/adv.2017.366
Autor:
Charan V. V. S. Surisetty, Stan D. Tsai, Steven Bentley, C. Labelle, John H. Zhang, Raghuveer R. Patlolla, Walter Kleemeier, Jody A. Fronheiser, Shariq Siddiqui, Donald F. Canaperi
Publikováno v:
MRS Advances. 2:2891-2902
As the scaling of the device dimensions in CMOS devices runs into physical limitations, new materials beyond Si with high electron and hole mobilities such as Ge, SiGe, and III-V materials are introduced. Challenges of CMP for these materials are rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01fdd7fc74d85be8cb5de15edd63ba94
https://doi.org/10.1557/adv.2017.339
https://doi.org/10.1557/adv.2017.339