Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Raghuraj Hathwar"'
Autor:
Jason Holmes, Srabanti Chowdhury, Jesse Brown, Anna Zaniewski, Franz A. M. Koeck, Benjamin Fox, Holly Johnson, Stephen M. Goodnick, Robert J. Nemanich, Ricardo Alarcon, Raghuraj Hathwar, Manpuneet Benipal, Maitreya Dutta
Publikováno v:
Diamond and Related Materials. 94:162-165
A new technique for neutralizing the polarization effect of diamond detectors has been demonstrated. The technique, which relies on the diamond detector to be configured as a diode, is to periodically pulse the diamond diode with forward bias. A 210P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ab4b79a26f7a6d4d9f9334f0eb81f55
https://doi.org/10.1016/j.diamond.2019.01.025
https://doi.org/10.1016/j.diamond.2019.01.025
Publikováno v:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX.
We use ensemble Monte Carlo simulation of electrons and holes to investigate ultrafast carrier processes related to hot carrier capture and multi-exciton generation relevant for advanced photovoltaic devices. The particle based simulation includes el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1116446dc92155bbab9d080a9af1e8cf
https://doi.org/10.1117/12.2551019
https://doi.org/10.1117/12.2551019
Autor:
Mehdi Saremi, Benjamin Fox, Robert J. Nemanich, Ricardo Alarcon, Jesse Brown, Srabanti Chowdhury, Mohamadali Malakoutian, Maitreya Dutta, Franz A. M. Koeck, Jason Holmes, Anna Zaniewski, Holly Johnson, Stephen M. Goodnick, Raghuraj Hathwar, Manpuneet Benipal
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 903:297-301
The response of a PIN diamond diode with a 4.5 μ m thick i-layer to α -particles from a 210Po radioactive source has been measured and compared to the response from a 300 μ m thick single crystal type IIa diamond. The results show that this PIN di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::907c9871c7837c53516a98aaddcafce6
https://doi.org/10.1016/j.nima.2018.06.061
https://doi.org/10.1016/j.nima.2018.06.061
Autor:
Alec M. Fischer, Srabanti Chowdhury, Robert J. Nemanich, Maitreya Dutta, Raghuraj Hathwar, Stephen M. Goodnick, Franz A. M. Koeck, Saptarshi Mandal
Publikováno v:
IEEE Electron Device Letters. 39:552-555
The extracted minority carrier lifetime in the n-layer of a diamond p-i-n diode on (111)- oriented diamond is presented here using the diode reverse recovery method. The storage time delay and the reverse current varied as a function of the ramp time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dcf3346a9a786161e401229902d3fad
https://doi.org/10.1109/led.2018.2804978
https://doi.org/10.1109/led.2018.2804978
Autor:
Stephen M. Goodnick, Raghuraj Hathwar, Robert J. Nemanich, Srabanti Chowdhury, Franz A. M. Koeck, Maitreya Dutta
Publikováno v:
IEEE Electron Device Letters. 37:1170-1173
Diamond is considered to be the ultimate semiconductor for power devices due to its high breakdown electric field, high carrier mobility, and superior thermal properties. The success of diamond-based electronic devices has been difficult due to criti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f79e03f2597d9079587e0e54a0d490fc
https://doi.org/10.1109/led.2016.2592500
https://doi.org/10.1109/led.2016.2592500
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
Nanowires are promising candidates for photovoltaic devices due to their large band gaps and reduced electron-phonon interactions. In the present paper, full band Monte Carlo simulations are performed on square In 0.53 Ga 0.47 As nanowires along [100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ae88b67232a565d626d647608bc012
https://doi.org/10.1109/nano.2016.7751540
https://doi.org/10.1109/nano.2016.7751540
Publikováno v:
14th IEEE International Conference on Nanotechnology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24c628e048310d191058cb64316a637c
https://doi.org/10.1109/nano.2014.6968090
https://doi.org/10.1109/nano.2014.6968090
Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells
Autor:
Lin Zhou, Stephen M. Goodnick, Theodore D. Moustakas, Martha R. McCartney, Toshihiro Aoki, David J. Smith, Raghuraj Hathwar, Emmanouil Dimakis
Publikováno v:
Physical Review B. 88
Polarization fields associated with one-monolayer-thick InN/GaN multiple quantum wells (MQWs) cause shifts of the photoluminescence peak that depend on the GaN barrier layer thickness. Diffraction contrast and aberration-corrected scanning transmissi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c2cffcaf313a61adf116d942a165d63
https://doi.org/10.1103/physrevb.88.125310
https://doi.org/10.1103/physrevb.88.125310
Autor:
Srabanti Chowdhury, Maitreya Dutta, Stephen M. Goodnick, Franz A. M. Koeck, Robert J. Nemanich, Raghuraj Hathwar
Publikováno v:
Journal of Applied Physics. 119:225703
Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore importa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18effa546589df6446b497ae1c7f5782
https://doi.org/10.1063/1.4953385
https://doi.org/10.1063/1.4953385
Autor:
Stephen M. Goodnick, Dragica Vasileska, Raghuraj Hathwar, K. Raleva, Suleman Sami Qazi, Robin Daugherty, Abdul R. Shaik, Akash Laturia
Publikováno v:
Handbook of Optoelectronic Device Modeling and Simulation ISBN: 9781315152318
As semiconductor devices are scaled into nanoscale regime, first velocity saturation starts to limit the carrier mobility due to pronounced intervalley scattering, and when the device dimensions are scaled to 100 nm and below, velocity overshoot star
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e44a1fedf1864b635d0d3672b2d590f0
https://doi.org/10.5772/16190
https://doi.org/10.5772/16190
