Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Raghunath Murali"'
Publikováno v:
Carbon. 50:1727-1733
The effect of atmospheric adsorbates, composed of dry oxygen (O 2 ) and ambient air, on electrical transport in high-quality and moderate-quality graphene samples was investigated. Atmospheric doping is seen to affect different samples at different r
Publikováno v:
Carbon. 50:637-645
We present a direct comparison between two fundamental methods of chemically doping the 2-dimensional graphene sheet: (1) passivation of dangling σ-bonds resulting from a vacancy defect and (2) charge transfer from adsorption on the pristine basal p
Publikováno v:
The Journal of Physical Chemistry C. 115:10230-10235
We present an experimental investigation of the impact of size effects on conductance in nanoribbons fabricated from epitaxial graphene. The material resistivity is seen to increase significantly (up to 13× for 50 nm wide ribbons) upon conversion fr
Publikováno v:
The Journal of Physical Chemistry A. 113:1946-1953
The localized surface plasmon resonance (LSPR) spectral band of a gold or silver nanoparticle is observed to shift as a result of the near-field plasmonic field of another nanoparticle. The dependence of the observed shift on the interparticle distan
Autor:
James D. Meindl, Raghunath Murali
Publikováno v:
Solid-State Electronics. 51:823-827
Accurate threshold voltage (VT) modeling of bulk-MOSFETs is important for device optimization and circuit simulation. Existing VT models cannot model the impact of source/drain junction depth on VT rolloff. A new model is proposed that can accurately
Publikováno v:
IEEE Electron Device Letters. 34:707-709
This letter is the first to present a method to selectively hydrogenate the edges of sub-30-nm graphene nanoribbons (GNRs). After hydrogenation of the edges, the GNRs exhibit improved transport properties; carrier mobility increases by up to 50% at a
Publikováno v:
IEEE Electron Device Letters. 33:866-868
We present the first demonstration of p-type electrical transport in chemically doped epitaxial graphene (EG) nanoribbons produced on silicon carbide (SiC). The thermal annealing of cross-linked thin films of hydrogen silsesquioxane (HSQ) is found to
Autor:
Raghunath Murali, Yinxiao Yang
Publikováno v:
IEEE Electron Device Letters. 31:237-239
Graphene has shown impressive properties for nanoelectronics applications including a high mobility and a width-dependent bandgap. Use of graphene in nanoelectronics would most likey be in the form of graphene nanoribbons (GNRs) where the ribbon widt
Publikováno v:
2011 11th IEEE International Conference on Nanotechnology.
We analyze the system-level performance of graphene-based arithmetic logic units (ALUs) enabled by Klein tunneling. Although the proposed graphene device is idealized (many experimental hurdles remain), it is important nonetheless to assess graphene'
Publikováno v:
ISSCC
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