Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Raghunandan Swain"'
Autor:
Asisa Kumar Panigrahy, Veera Venkata Sai Amudalapalli, Depuru Shobha Rani, Muralidhar Nayak Bhukya, Hima Bindu Valiveti, Vakkalakula Bharath Sreenivasulu, Raghunandan Swain
Publikováno v:
IEEE Access, Vol 12, Pp 73160-73168 (2024)
This work investigates the effect of single and dual-k spacer materials consisting of different dielectric constants (k) in optimized nano-channel gate-stack nanosheet (NS-FET) employing hafnium oxide and silicon dioxide as gate insulator to improve
Externí odkaz:
https://doaj.org/article/add9fc6864b041c39c460023a32e423d
Autor:
Asisa Kumar Panigrahy, Sudheer Hanumanthakari, Shridhar B. Devamane, Shruti Bhargava Choubey, M. Prasad, D. Somasundaram, N. Kumareshan, N. Arun Vignesh, Gnanasaravanan Subramaniam, Durga Prakash M, Raghunandan Swain
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 5, Pp 1-8 (2024)
This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO2 and HfO2, each having a
Externí odkaz:
https://doaj.org/article/c7a27a7b45314661aa163b68f5786f89
Autor:
Asisa Kumar Panigrahy, Shima Ramesh Maniyath, Mithileysh Sathiyanarayanan, Mohan Dholvan, T. Ramaswamy, Sudheer Hanumanthakari, N. Arun Vignesh, S. Kanithan, Raghunandan Swain
Publikováno v:
IEEE Access, Vol 12, Pp 10818-10833 (2024)
A robust image encryption process is still one of the most challenging tasks in image security owing to massive degree and sensitivity nature of information in the form of pixels. The hurdles include greater computational difficulty, information loss
Externí odkaz:
https://doaj.org/article/dd64a571cbea46709d0366d43b9d1ed8
Publikováno v:
2023 7th International Conference on Trends in Electronics and Informatics (ICOEI).
Autor:
M. Durga Prakash, Shaik Lathifa Nihal, Shaik Ahmadsaidulu, Raghunandan Swain, Asisa Kumar Panigrahy
Publikováno v:
Silicon. 14:8621-8627
Publikováno v:
Silicon.
Autor:
Raghunandan Swain, Trupti Ranjan Lenka
Publikováno v:
HEMT Technology and Applications ISBN: 9789811921643
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac30a191a526cf3b61227322f563ab0f
https://doi.org/10.1007/978-981-19-2165-0_10
https://doi.org/10.1007/978-981-19-2165-0_10
Publikováno v:
Journal of Semiconductors; Mar2015, Vol. 36 Issue 3, p1-1, 1p