Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Raghavan Naga"'
Autor:
Danilyuk, M.A., Migas, D.B., Danilyuk, A.L., Borisenko, V.E., Xing Wu, Raghavan Naga, Kin-Leong Pey
HfO2 nanostructures are currently considered to be very promising for different applications including gate oxides in Si transistors and emerging nonvolatile memory cells such as resistive random access memory (RRAM). For RRAM development a clear und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::3b45ea5c475d43722fa937bce94aedb1
http://essuir.sumdu.edu.ua/handle/123456789/20559
http://essuir.sumdu.edu.ua/handle/123456789/20559
Autor:
Ossai Chinedu I., Raghavan Nagarajan
Publikováno v:
Nanotechnology Reviews, Vol 7, Iss 2, Pp 209-231 (2018)
Nanostructures are playing significant roles in the development of new functions and the enhancement of the existing functions of industrial devices such as sensors, transistors, diodes, lithium-ion batteries, and photovoltaic cells, due to their pie
Externí odkaz:
https://doaj.org/article/fb2fc8cdc2f045e39205db1337a6c01d
Autor:
Chen, Yang Yin, Komura, Masanori, Degraeve, Robin, Govoreanu, Bogdan, Goux, Ludovic, Fantini, Andrea, Raghavan, Naga, Clima, Sergiu, Zhang, Leqi, Belmonte, Attilio, Redolfi, Augusto, Kar, Gouri Sankar, Groeseneken, Guido, Wouters, Dirk J., Jurczak, Malgorzata
Publikováno v:
2013 IEEE International Electron Devices Meeting; 2013, p10.1.1-10.1.4, 0p