Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Raffi Elmadjian"'
Autor:
Craig Geiger, Jiaying Wang, Ke Luo, Fred Dai, Xiaobing Mei, Joe Zhou, Bryce Warner, Vesna Radisic, Scott Olson, William Dean, Chi Cheung, Richard Lai, Raffi Elmadjian, Xianglin Zeng, Michael E. Barsky, Roosevelt Johnson, J. Uyeda
Publikováno v:
ECS Transactions. 11:29-35
35 nm gate InP HEMT devices were fabricated with S-MMIC amplifier designs at Northrop Grumman Space Technology (NGST). A 3-stage, grounded coplanar, 2-mil substrate LNA design exhibited a peak gain of 12 dB at 340GHz, the highest gain above 300 GHz r
Autor:
R. Sandhu, Vincent Gambin, Benjamin Poust, Gregory T. Lewis, Karl D. Hobart, Mike Wojtowicz, Bradford B. Pate, Tatyana I. Feygelson, Ioulia Smorchkova, Danny Li, Benjamin Heying, Raffi Elmadjian, Aaron K. Oki, Craig Geiger
Publikováno v:
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
GaN on SiC technology has offered tremendous benefits over existing GaAs-based RF technologies. The high breakdown voltage and current handling capability of GaN HEMTs enable a 10x increase in RF power over conventional GaAs- based devices for the sa
Autor:
Tatyana I. Feygelson, Benjamin Poust, Karl D. Hobart, Mike Wojtowicz, Ioulia Smorchkova, Raffi Elmadjian, Elah Bozorg-Grayeli, Kenneth E. Goodson, Vincent Gambin, Gregg Lewis, Aaron K. Oki, R. Sandhu, Craig Geiger, Danny Li, Ben Heying
Publikováno v:
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
GaN HEMT technology is transforming applications in communications, radar, and electronic warfare by offering more than 5x higher RF transmit power over the existing GaAs-based technologies. The high breakdown voltage and current handling capability
Autor:
D. Eaves, K. Luo, A. Oki, W.-B. Luo, Jennifer Wang, Michael E. Barsky, Richard Lai, Mike Wojtowicz, Raffi Elmadjian, J. Uyeda, D.S. Farkas
Publikováno v:
2007 IEEE Compound Semiconductor Integrated Circuits Symposium.
In this paper, we demonstrate a vertically integrated 3-D MMIC phase shifter at 8 GHz that utilizes a 5-layer benzocyclobutene (BCB) process providing a total of 7 metal layers. This multi-layer technology is fully compatible with Northrop Grumman's
Autor:
Wendy Lee, Danny Li, David Farkas, Xing Lan, Michael Conrad Battung, Matthew Parlee, Wen-Ben Luo, L. Dang, Raffi Elmadjian, Xianglin Zeng, Kelly Hennig, Chi Cheung, David M. Eaves, Michael E. Barsky, J. Uyeda, Patty Chang-Chien
Publikováno v:
ECS Meeting Abstracts. :1031-1031
Northrop Grumman Aerospace Systems (NGAS) has developed a Wafer Scale Assembly (WSA) process that is compatible with Benzocyclobutene (BCB) processes. BCB is a common dielectric material used to construct multi-metal interconnects. BCB processes enab
Autor:
Jansen J. Uyeda, Xiaobing (Gerry) Mei, Ling-Shine (Jane) Lee, Danny Li, Wayne Yoshida, Po-Hsin Liu, Linh Dang, Ke Luo, Raffi Elmadjian, Joe Zhou, William Deal, Vesna Radisic, Richard Lai
Publikováno v:
ECS Meeting Abstracts. :2242-2242
not Available.
Autor:
P. Chang, Donald Sawdai, Vincent Gambin, Xianglin Zeng, Danny Li, Joy Yamamoto, Kwok Loi, Gregg Leslie, Jennifer Wang, Raffi Elmadjian, Peter Nam, Chris Grossman, Mike Barsky, Augusto Gutierrez-Aitken, Aaron Oki
Publikováno v:
ECS Meeting Abstracts. :592-592
not Available.