Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Rafal Oszwaldowski"'
Autor:
W. C. Fan, Rafal Oszwaldowski, Alexander N. Cartwright, James Pientka, Biplob Barman, Wu-Ching Chou, Athos Petrou, Joseph Murphy
Publikováno v:
The Journal of Physical Chemistry C. 124:12766-12773
We used time-resolved photoluminescence spectroscopy to study the circular polarization dynamics of magnetic polarons in type-II (Zn,Mn)Te/ZnSe quantum dots in the presence of an external magnetic ...
Autor:
Rafal Oszwaldowski, Biplob Barman, Tenzin Norden, Jong E. Han, Wu Ching Chou, James Pientka, Igor Žutić, Arman Najafi, B. D. McCombe, Yutsung Tsai, Athos Petrou, W. C. Fan, Peiyao Zhang
Publikováno v:
The Journal of Physical Chemistry C. 123:25934-25940
Unlike the extensively studied, spatially direct, quantum dots (QDs) with type-I band alignment where both electrons and holes are confined in the QD, in ZnTe QDs embedded in a (Zn,Mn)Se matrix onl...
Semiconductor quantum dots (QDs) doped with magnetic impurities have been a focus of continuous research for a couple of decades. A significant effort has been devoted to studies of magnetic polarons (MP) in these nanostructures. These collective sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec2e5b8f1e7d61ebbc371ab6cd67824b
http://arxiv.org/abs/1707.01565
http://arxiv.org/abs/1707.01565
Autor:
Luonan Chen, Takashi Takahashi, Tomasz Dietl, Fumihiro Matsukura, Hideo Ohno, Takafumi Sato, Rafal Oszwaldowski, Seigo Souma
Publikováno v:
Scientific Reports
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::436eac3201176c1e082b7a8576e7bd96
http://arxiv.org/abs/1606.02047
http://arxiv.org/abs/1606.02047
Publikováno v:
physica status solidi (b). 244:2391-2398
The Landauer-Buttiker formalism combined with the tight-binding transfer matrix method is employed to model vertical coherent spin transport within magnetization modulated semiconductor heterostructures based on GaAs. This formalism provides excellen
In magnetically-doped quantum dots changing the carrier occupancy, from open to closed shells, leads to qualitatively different forms of carrier-mediated magnetic ordering. While it is common to study such nanoscale magnets within a mean field approx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8288fd7d5173195a9dc31db24aac0e2
http://arxiv.org/abs/1509.05068
http://arxiv.org/abs/1509.05068
Autor:
W. C. Fan, B. D. McCombe, Igor Žutić, Biplob Barman, Wu-Ching Chou, Rafal Oszwaldowski, Joseph Murphy, Alexander N. Cartwright, Ian R. Sellers, Yutsung Tsai, James Pientka, Andreas Russ, Athos Petrou, L. Schweidenback, Andre Petukhov
Publikováno v:
Physical Review B. 92
We used continuous wave photoluminescence (cw-PL) and time resolved photoluminescence (TR-PL) spectroscopy to compare the properties of magnetic polarons (MP) in two related spatially indirect II-VI epitaxially grown quantum dot systems. In the ZnTe/
Publikováno v:
Applied Surface Science. 234:107-112
The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show t
Publikováno v:
ResearcherID
A new DF-LCAO (density functional with local combination of atomic orbitals) method is used to calculate the electronic properties of 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA), C6H6, CH4, and CO. The method, called the OO (orbital occupanc
Publikováno v:
International Journal of Quantum Chemistry. 91:151-156
We introduce a local density formalism, where the total energy of the system is obtained as a function of the orbital occupancies {n}. The exchange energy, E X is written in terms of the electrostatic interaction between a charge n and its hole (1 n)