Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Rafal Kopacz"'
Publikováno v:
IEEE Access, Vol 10, Pp 26849-26858 (2022)
This paper discusses various solutions of energy conversion in medium voltage using power switches in Silicon Carbide (SiC) technology. In particular, a comparative study is focused on four different variants of an inverter phase leg operating at 1.5
Externí odkaz:
https://doaj.org/article/c3a90f77d223458f85d8bf60ff0ad34c
Publikováno v:
IEEE Access, Vol 9, Pp 8604-8614 (2021)
This article presents a medium voltage half-bridge circuit where 3.3 kV power switches are built with two 1.7 kV/325 A SiC MOSFETs series-connected inside power modules. Essence of this work is an active balancing method eliminating the voltage imbal
Externí odkaz:
https://doaj.org/article/bf9bee8897734427bd4e42dcff88eca2
Publikováno v:
2023 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3458ac8132d7370faa24162a8e57a5f
https://doi.org/10.1109/esars-itec57127.2023.10114898
https://doi.org/10.1109/esars-itec57127.2023.10114898
Autor:
Jacek Rabkowski, Rafal Kopacz, Radoslaw Sobieski, Mariusz Zdanowski, Przemyslaw Trochimiuk, Szymon Piasecki
Publikováno v:
2022 Progress in Applied Electrical Engineering (PAEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7b4514436367282d209e4c51d8cc9d4
https://doi.org/10.1109/paee56795.2022.9966579
https://doi.org/10.1109/paee56795.2022.9966579
Publikováno v:
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).
This paper presents a medium voltage (1.5 kV) flying capacitor DC/DC converter rated at 30 kW. The fast switching 1.2 kV/11 mΩ SiC MOSFETs converter operates in quasi-2-level (Q2L) mode at high frequency (100 kHz) to obtain a low size of the flying
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8457a32565168c76b7a3e02108219dd
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215950
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215950
Autor:
Rafal Kopacz, J. Rąbkowski
Publikováno v:
Power Electronics and Drives, Vol 3, Iss 1, Pp 55-64 (2018)
This paper presents a new concept for a power electronic converter - the extended T-type (eT) inverter, which is a combination of a three-phase inverter and a three-level direct current (dc)/dc converter. The novel converter shows better performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3abf2595a9280a4e799a8654a61a19cc
https://doi.org/10.2478/pead-2018-0015
https://doi.org/10.2478/pead-2018-0015
Publikováno v:
Energies, Vol 14, Iss 5580, p 5580 (2021)
Energies
Volume 14
Issue 17
Energies
Volume 14
Issue 17
This work is focused on the design and experimental validation of the all-SiC active neutral-point clamped (ANPC) submodule for an advanced electric vehicle (EV) charging station. The topology of the station is based on a three-wire bipolar DC bus (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::662f65597bbcba5d6d7436776fac86bb
https://doi.org/10.3390/en14175580
https://doi.org/10.3390/en14175580
Publikováno v:
2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe).
This paper presents various issues related to a medium voltage power switch designed with series-connected transistors of the 1700 V/300 A SiC MOSFET power module. The focus of the paper are the voltage imbalance compensation methods: passive snubber
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60238fb4d5a9fcb515e22d5e7a9e85de
https://doi.org/10.23919/epe.2019.8915468
https://doi.org/10.23919/epe.2019.8915468
Publikováno v:
Applied Sciences, Vol 11, Iss 2210, p 2210 (2021)
Applied Sciences
Volume 11
Issue 5
Applied Sciences
Volume 11
Issue 5
This article discusses an active gate driver for a 1.7 kV/325 A SiC MOSFET module. The main purpose of the driver is to adjust the gate voltage in specified moments to speed up the turn-on cycle and reduce the amount of dissipated energy. Moreover, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e3d0c852372d2402ff05333e2ed07b9
https://doi.org/10.3390/app11052210
https://doi.org/10.3390/app11052210
Publikováno v:
Energies; Volume 13; Issue 18; Pages: 4773
Energies, Vol 13, Iss 4773, p 4773 (2020)
Energies, Vol 13, Iss 4773, p 4773 (2020)
This paper presents an original method of power loss validation in medium-voltage SiC MOSFET (metal–oxide–semiconductor field-effect transistor) modules of a three-phase inverter. The base of this method is a correct description of the on-state p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f0d551fc15a7bc57746895604336d10
https://doi.org/10.3390/en13184773
https://doi.org/10.3390/en13184773