Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Rafael Jaculbia"'
Publikováno v:
Vacuum and Surface Science. 64:34-39
Autor:
Bo Yang, Emiko Kazuma, Takeshi Iwasa, Norihiko Hayazawa, Kuniyuki Miwa, Yousoo Kim, Hiroshi Imada, Rafael Jaculbia, Tetsuya Taketsugu, Masato Takenaka
Publikováno v:
Nature Nanotechnology. 15:105-110
Tip-enhanced Raman spectroscopy (TERS) is a versatile tool for chemical analysis at the nanoscale. In earlier TERS experiments, Raman modes with components parallel to the tip were studied based on the strong electric field enhancement along the tip.
Autor:
Masanobu Uchiyama, Emiko Kazuma, Yousoo Kim, Rafael Jaculbia, Hiroshi Imada, Yusuke Tanaka, Norihiko Hayazawa, Chi Zhang, Atsuya Muranaka
Publikováno v:
Journal of the American Chemical Society. 143(25)
Highly unsaturated π-rich carbon skeletons afford versatile tuning of structural and optoelectronic properties of low-dimensional carbon nanostructures. However, methods allowing more precise chemical identification and controllable integration of t
Autor:
Masahiko Tani, Rafael Jaculbia, Arnel Salvador, Maria Herminia Balgos, Armando Somintac, Elmer Estacio, Elizabeth Ann Prieto, Valynn Katrine Mag-usara
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:12436-12442
The deposition of n-GaAs cap on low-temperature GaAs (LT-GaAs) improved the THz emission of LT-GaAs grown at a much lower temperature (< $$300\,^{\circ }$$ C), where the defect density is high, without compromising the spectral bandwidth and carrier
Publikováno v:
Journal of the Optical Society of America B. 39:307
We investigated the effects of detection angle and substrate in the analysis of the polarization properties of 1D dipole emission. Modifications were made to the analytical expression of dipole emission using transformation of coordinates. The conseq
Autor:
Armando Somintac, Jessica Afalla, Arnel Salvador, Maria Herminia Balgos, Elmer Estacio, Karim Omambac, Rafael Jaculbia, Deborah Anne Lumantas
Publikováno v:
Superlattices and Microstructures. 109:324-329
We have demonstrated experimental evidence of non-resonant tunneling at room temperature in GaAs/AlGaAs asymmetric coupled double quantum wells (ACDQW’s) using time-resolved photoluminescence (TRPL) spectroscopy at 300 K. Two ACDQW samples (A and B
Publikováno v:
Applied Spectroscopy. :000370282093836
Both surface-enhanced Raman spectroscopy (SERS) and tip-enhanced Raman spectroscopy (TERS) are widely used for the investigation of nanoscale materials. One of the most critical aspects of both SERS and TERS is the control of both the plasmon and mol
Autor:
Elmer Estacio, Arnel Salvador, Masahiko Tani, Norihiko Hayazawa, Rafael Jaculbia, Mary Clare Sison Escaño, Tien Quang Nguyen, Elizabeth Ann Prieto, Armando Somintac, Yousoo Kim, Maria Herminia Balgos
Publikováno v:
Applied Surface Science. 511:145590
We reveal the As-antisite (AsGa) defect close to the surface of GaAs(1 1 0) with bulk characteristics using first-principles methods with experimental verifications. We found that the AsGa in the third-layer mimics the geometry, partial charge densit
Autor:
Norihiko Hayazawa, Armando Somintac, Elmer Estacio, Maria Herminia Balgos, Masahiko Tani, Elizabeth Ann Prieto, Yousoo Kim, Arnel Salvador, Rafael Jaculbia
Publikováno v:
Journal of Applied Physics. 126:235706
Semiconductor interfaces are the backbone of modern optoelectronic devices. In terahertz (THz) science, the narrow region of an interface is crucial in the emission process. However, reports on the direct correlation of THz emission with local interf
Autor:
Maria Herminia Balgos, Elmer Estacio, Arnel Salvador, Jasher John Ibañes, Armando Somintac, Jessica Afalla, Rafael Jaculbia, Michelle Bailon-Somintac, Michael Defensor
Publikováno v:
Journal of Luminescence. 155:27-31
We report on the shell-to-core carrier-transfer in GaAs/Al 0.1 Ga 0.9 As core-shell nanowires grown on Si(1 0 0) substrates via molecular beam epitaxy. The nanowires are dominantly zincblende and are tilted with respect to the substrate surface. Phot