Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Rafael B. Schivittz"'
Autor:
Rafael B. Schivittz, Rafael Fritz, Denis T. Franco, Lirida Naviner, Cristina Meinhardt, Paulo F. Butzen
Publikováno v:
2016 29th Symposium on Integrated Circuits and Systems Design (SBCCI).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d489dcc5629c0848b957c496e5c3e3
https://doi.org/10.1109/sbcci.2016.7724070
https://doi.org/10.1109/sbcci.2016.7724070
Publikováno v:
LATS
Reliability in advanced CMOS devices is a critical issue that can supersede the benefits of technology shrinking process. The Probabilistic Transfer Matrix (PTM) is the basis of more common reliability evaluation models. This work presents a probabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fedf3c55535a84f42d18ff21c64b847
https://doi.org/10.1109/latw.2016.7483337
https://doi.org/10.1109/latw.2016.7483337
Publikováno v:
ICECS
Aging effects has become a critical reliability constraints in nanometer circuits. The major aging mechanism is the BTI (Bias Temperature Instability), which increases the transistor threshold voltage, reducing system operation frequency and may gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de7c78ebc419919bbf88f7e15d274080
https://doi.org/10.1109/icecs.2015.7440403
https://doi.org/10.1109/icecs.2015.7440403