Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Rafał Lewandków"'
Autor:
Katarzyna Lament, Miłosz Grodzicki, Piotr Mazur, Agata Sabik, Rafał Lewandków, Antoni Ciszewski
Publikováno v:
Crystals, Vol 13, Iss 3, p 441 (2023)
PTCDI-C8 molecules are vapor-deposited onto reconstructed Si(100)—(2 × 1) surface under ultra-high vacuum. X-ray photoelectron spectra reveal a bond formation between oxygen atoms of the molecules’ carboxylic groups and Si dangling bonds of the
Externí odkaz:
https://doaj.org/article/9fec11f68e924f988af42d32e63a5f5a
Publikováno v:
Crystals, Vol 12, Iss 12, p 1847 (2022)
In this work the n-GaN(1000) surface is used as a source of nitrogen atoms in order to obtain niobium nitride film by a surface-mediated nitridation technique. To this end, the physical vapor deposition of the niobium film on GaN is followed by sampl
Externí odkaz:
https://doaj.org/article/ba7c6c7a0cba4505a7d342d70d40f7f0
Publikováno v:
Surface and Interface Analysis. 53:118-124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18833b636e6161c6c45be67d9d8ce730
https://doi.org/10.1002/sia.6886
https://doi.org/10.1002/sia.6886
Publikováno v:
Materials (Basel, Switzerland). 15(5)
This report presents results of research on electronic structure of three interfaces composed of organic layers of Alq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::107f592a1fe5b499fedd74ae2a614505
https://pubmed.ncbi.nlm.nih.gov/35268914
https://pubmed.ncbi.nlm.nih.gov/35268914
Publikováno v:
Materials
Volume 14
Issue 15
Materials, Vol 14, Iss 4189, p 4189 (2021)
Volume 14
Issue 15
Materials, Vol 14, Iss 4189, p 4189 (2021)
This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ba96d324ecb390da9d297cd6980da26
http://europepmc.org/articles/PMC8347823
http://europepmc.org/articles/PMC8347823
Publikováno v:
Materials; Volume 15; Issue 5; Pages: 1671
This report presents results of research on electronic structure of three interfaces composed of organic layers of Alq3, Gaq3, or Erq3 deposited on GaN semiconductor. The formation of the interfaces and their characterization have been performed in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31dfabfc5116e73fce3caffaed9afb05
https://doi.org/10.3390/ma15051671
https://doi.org/10.3390/ma15051671
Publikováno v:
Surface Review and Letters. 28:2150077
In order to determine its electronic and chemical properties, the Al2O3/p-GaN(0001) interface is studied in situ by the X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). Using physical vapor deposition (PVD) method, the Al2O3 film is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae4a23ab57c38d5d1055a4b360cef75e
https://doi.org/10.1142/s0218625x21500773
https://doi.org/10.1142/s0218625x21500773
Publikováno v:
Surface Review and Letters. 27:2050013
The growth and stability of hafnium films on [Formula: see text]-GaN(0001) surface with native oxide was investigated with X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS). It is shown that hafnium creates a continuous and stable layer on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a607ba31205649cf7e44ba33669c58a5
https://doi.org/10.1142/s0218625x20500134
https://doi.org/10.1142/s0218625x20500134
Publikováno v:
Vacuum. 177:109345
The physical vapor deposition method is used to form layers of Al2O3 insulator on carbon enriched (0001)-oriented 6H-SiC substrate at room temperature. The substrate surface and the Al2O3/6H-SiC interface are characterized in situ by X-ray photoelect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e779c3653bc8e07197ffd960ed8e650
https://doi.org/10.1016/j.vacuum.2020.109345
https://doi.org/10.1016/j.vacuum.2020.109345