Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Raf Vandersmissen"'
Autor:
Raf Vandersmissen, Patrick Merken
Publikováno v:
aot. 2:241-245
Optical coherence tomography (OCT), a spectroscopy technique, has been used in biomedical applications for about 20 years. It has evolved to a standard non-invasive examination procedure yielding detail-rich cross-sectional images of living tissue. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcc0a594f119b82cec47abe432b9d040
https://doi.org/10.1515/aot-2012-0083
https://doi.org/10.1515/aot-2012-0083
Autor:
Pieter Deroo, B. Gouverneur, K. Vanhoof, Kristof Wouters, Jan Vermeiren, G. Gielis, Patrick Merken, Raf Vandersmissen, Jo Das
Publikováno v:
SPIE Proceedings.
SWIR imaging based on InGaAs based FPAs is well suited for passive or active day and night vision applications in different weather conditions, including surveillance, defense or fire-fighting. Xenics developed the Rufus camera, based on a 640 x 512
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1b2fd561cd8fdd26a376a3e356e51a6
https://doi.org/10.1117/12.2177318
https://doi.org/10.1117/12.2177318
Autor:
Joff Derluyn, Wouter Ruythooren, Marianne Germain, Gustaaf Borghs, Raf Vandersmissen, Johan Das
Publikováno v:
physica status solidi (c). 2:2655-2658
AlGaN/GaN high electron mobility transistors are very promising for microwave power applications. Integration and packaging of those high power density devices requires specific attention to thermal management, especially when the AlGaN/GaN heterostr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::204ee9aa8d2834e264b2cb7dbc63fa32
https://doi.org/10.1002/pssc.200461355
https://doi.org/10.1002/pssc.200461355
Autor:
Raf Vandersmissen
Publikováno v:
Optik & Photonik. 8:41-43
Rund um die Uhr bei jedem Wetter einsetzbare Aufklarungsmittel bieten fur Wehrtechnik und Rettungsdienste entscheidende Einsatzvorteile. Gegenuber anderen Technologien zeigen SWIR (short wave infrared light)-Kameras durchgangig gute Resultate, die si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fef4bccc27be3641d94ad371f4c899f
https://doi.org/10.1002/opph.201300026
https://doi.org/10.1002/opph.201300026
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 14:535-542
This article shows how the opto-electrical interaction of a microwave device, that is, a metamorphic HEMT, can be characterized by combining a large-signal network analyzer setup with a modulated laser (1550-nm) module. Furthermore, an optically tuna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::593e5c2c677aee3713c30f3de190571b
https://doi.org/10.1002/mmce.20042
https://doi.org/10.1002/mmce.20042
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 12:439-447
HEMTs on germanium have the advantage that the substrate can be easily removed, which facilitates integration into low-cost MCM-D circuit implementations. Although germanium has (dispersive) characteristics similar to silicon, we show that the large-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::110cd870a109661000a58c5f8fd84c73
https://doi.org/10.1002/mmce.10042
https://doi.org/10.1002/mmce.10042
Publikováno v:
59th ARFTG Conference Digest, Spring 2002..
It is shown in this paper how the opto-electrical interaction of a microwave device can be characterized by combining a large-signal network analyzer set-up with a modulated laser module. The concept is demonstrated by measuring a "thin film" M(etamo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30195c47cf683f1ba84d141aea136b2e
https://doi.org/10.1109/arftgs.2002.1214680
https://doi.org/10.1109/arftgs.2002.1214680
Publikováno v:
Conference, 2003. Fall 2003. 62nd ARFTG Microwave Measurements.
We construct a large-signal state-space model for thin-film metamorphic HEMTs based on germanium, directly from time-domain large-signal measurements. These thin-film HEMTs are used in a feedback amplifier circuit, designed as a multichip module with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48187387154befe5baf20b988b6f7fae
https://doi.org/10.1109/arftgf.2003.1459791
https://doi.org/10.1109/arftgf.2003.1459791
Publikováno v:
Vandersmissen, Raf ; Schreurs, Dominique ; Carchon, G. ; Borghs, G. (2003) Feedback Amplifier based on an Embedded HEMT in Thin-film Multilayer MCM-D Technology. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
In this paper a feedback amplifier circuit integrated in MCM-D (MultiChip Module with Deposited thin films) on glass technology is presented. The active device of the amplifier is a thin-film Ge (germanium) -based HEMT. The HEMT is embedded in the bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd1c64f5bd6f7de57ab0091871e3c8a7
https://doi.org/10.1109/eumc.2003.1262278
https://doi.org/10.1109/eumc.2003.1262278
Autor:
Raf Vandersmissen, Wenfei Wang, Wouter Ruythooren, Maarten Leys, Gustaaf Borghs, Steven Boeykens, Marianne Germain, Joff Derluyn, Dongping Xiao, Johan Das, Stefan Degroote
Publikováno v:
MRS Proceedings. 831
Passivation of AlGaN/GaN HEMT by SiN has been shown by several authors to improve device performance. In this paper we demonstrate a new method of passivating the top AlGaN layer, that leads to a drastic improvement of the device characteristics. On
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a6b3d83d8558e88fa8dadc87cdad3f1
https://doi.org/10.1557/proc-831-e6.7
https://doi.org/10.1557/proc-831-e6.7