Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Radim Spetik"'
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The paper summarizes layout considerations as well as experimental data of low voltage (50 V) trench MOSFET with integrated current sensor. Major effects responsible for errors of the sensed current as well as its current dependency are discussed. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1244d0d1588e6bef089432fd785e9219
https://doi.org/10.23919/ispsd50666.2021.9452309
https://doi.org/10.23919/ispsd50666.2021.9452309
Autor:
Santosh Menon, B. Greenwood, Jifa Hao, Filip Kudrna, M. Thomason, Ladislav Seliga, Aakash Arora, Roman Malousek, Matej Blaho, B. Williams, Ihsiu Ho, Radim Spetik, Shuji Fujiwara
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33836997e9c8fc88e33d7b6eda0fed2f
https://doi.org/10.1109/ispsd46842.2020.9170095
https://doi.org/10.1109/ispsd46842.2020.9170095
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
In this paper, a novel method for creation of Partial Silicon on Insulator (PSOI) substrate is divulged. The PSOI substrate may be thereafter utilized as a starting material for power integrated technologies where both dielectrically isolated devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb5309515d615395ce25cdd841bd66f4
https://doi.org/10.23919/ispsd.2017.7988950
https://doi.org/10.23919/ispsd.2017.7988950
Publikováno v:
Thin Solid Films. 518:4052-4057
The structure of as-deposited and annealed polycrystalline silicon layers has been investigated by scanning electron microscopy and x-ray diffraction. The structure of intentionally undoped layers prepared by low pressure chemical vapor deposition at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6737fb59f369efee9f241824c2dfc75
https://doi.org/10.1016/j.tsf.2010.02.018
https://doi.org/10.1016/j.tsf.2010.02.018
Publikováno v:
ECCTD
The Approximate Discrete Zolotarev Transform (ADZT) has been introduced recently. The aim of this paper is to describe the possibilities and limitations of ADZT when used for a signal reconstruction. The signal reconstruction is shown for three types
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86d436ecb1a8d197467f145a044ffe5f
https://doi.org/10.1109/ecctd.2013.6662335
https://doi.org/10.1109/ecctd.2013.6662335