Zobrazeno 1 - 2
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pro vyhledávání: '"Radim Pechal"'
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
This work describes calibration of both turn-off and turn-on switching losses of I200V UltraFS Trench Insulated Gate Bipolar Transistor (TIGBT) by using equivalent circuit of Double Pulse Tester (DPT) in Synopsys TCAD mixed-mode simulation. The model
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
A helium implantation is a common technique used for electron and hole lifetime control in semiconductor devices. Siemieniec [1] shows that suitable annealing conditions after the helium implantation lead to an increased conductivity of N-type silico