Zobrazeno 1 - 10
of 7 023
pro vyhledávání: '"Radiation Hardening"'
Autor:
Li, Hongxia1,2 (AUTHOR) lihongxia@yzu.edu.cn, Guo, Hongping1 (AUTHOR) xiaoc0222@163.com, Tu, Hui1,2 (AUTHOR), Chen, Xiao1,2 (AUTHOR), Zeng, Xianghua1,2 (AUTHOR) lihongxia@yzu.edu.cn
Publikováno v:
Polymers (20734360). Oct2024, Vol. 16 Issue 20, p2902. 11p.
Autor:
Novikov, V. V.1 (AUTHOR), Plyasov, A. A.1 (AUTHOR) alex_plyasov@mail.ru
Publikováno v:
Physics of Atomic Nuclei. Dec2022, Vol. 85 Issue 12, p1972-1980. 9p.
Publikováno v:
Electronics Letters, Vol 60, Iss 23, Pp n/a-n/a (2024)
Abstract In this paper, a radiation hardened by design StrongARM comparator is proposed to mitigate the radiation effects. With 12 additional transistors compared to the conventional one, the proposed structure shows much higher immunity to single‐
Externí odkaz:
https://doaj.org/article/faee7d84b90640c39899e1ae1fd7e1ae
Effect of high energy helium ion irradiation on microstructure and mechanical response of CLAM steel
Publikováno v:
Cailiao gongcheng, Vol 52, Iss 5, Pp 138-147 (2024)
The blanket structural material of fusion reactor will induce radiation damage during the period of service. As the preferred structural material of thermonuclear fusion reactor, it is necessary to study its radiation behaviour. High energy helium io
Externí odkaz:
https://doaj.org/article/0b18e0ab26974aad8a9902caa0e43c48
Autor:
Wang, Fan1,2, Shao, Chongyun1,2, Yu, Chunlei1, Wang, Shikai1, Zhang, Lei1, Gao, Guojun3, Hu, Lili1 hulili@siom.ac.cn
Publikováno v:
Journal of Applied Physics. 2019, Vol. 125 Issue 17, pN.PAG-N.PAG. 6p. 2 Charts, 5 Graphs.
Autor:
Yunyi Qi, Peter Michael Gammon, Arne Benjamin Renz, Viren Kotagama, Guy William Clarke Baker, Marina Antoniou
Publikováno v:
Power Electronic Devices and Components, Vol 8, Iss , Pp 100068- (2024)
For a power device to be used in space, it must be able to recover from a single event effect caused by heavy ion radiation. Conventional vertical silicon carbide (SiC) power devices such as automotive diodes and MOSFETs, can only meet this requireme
Externí odkaz:
https://doaj.org/article/f50fc2947c684030a191c90ee4b01e6d
Publikováno v:
Materials at High Temperatures. Sep2018, Vol. 35 Issue 5, p469-481. 13p. 2 Color Photographs, 19 Diagrams, 5 Charts.
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2326-2336 (2023)
With the development of semiconductor technology, the size of transistors continues to shrink. In complex radiation environments in aerospace and other fields, small-sized circuits are more prone to soft error (SE). Currently, single-node upset (SNU)
Externí odkaz:
https://doaj.org/article/b2be9a420ce346f1933c29f746615ec6
Autor:
Lancry, Matthieu1, Babu, B. Hari1,2 hariphy2012@gmail.com, Ollier, Nadège2, Poumellec, Bertrand1
Publikováno v:
International Journal of Applied Glass Science. Sep2017, Vol. 8 Issue 3, p285-290. 6p.