Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Radhakrishnan, M.K."'
Autor:
Wei, F., Hau-Riege, S.P., Gan, C.L., Thompson, Carl V., Clement, J.J., Tay, H.L., Yu, B., Radhakrishnan, M.K., Pey, Kin Leong, Choi, Wee Kiong
The effects of interconnect length on the reliability of dual-damascene Cu metallization have been investigated. As in Al-based interconnects, the lifetimes of Cu lines increase with decreasing length. However, unlike Al-based interconnects, no criti
Externí odkaz:
http://hdl.handle.net/1721.1/3977
Autor:
Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Wei, F., Hau-Riege, S.P., Augur, R., Tay, H.L., Yu, B., Radhakrishnan, M.K.
An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via interconnects in the lower metal (M1) and the upper
Externí odkaz:
http://hdl.handle.net/1721.1/3976
Publikováno v:
In Microelectronics Reliability 2003 43(9):1471-1476
Publikováno v:
In Microelectronics Reliability 2002 42(4):565-571
Publikováno v:
Applied physics letters 83 (2003): 2223–2225.
info:cnr-pdr/source/autori:Tung C.H., Pey K.L., Tang L.J., Radhakrishnan M.K., Lin W.H., Palumbo F., Lombardo S./titolo:Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient/doi:/rivista:Applied physics letters/anno:2003/pagina_da:2223/pagina_a:2225/intervallo_pagine:2223–2225/volume:83
info:cnr-pdr/source/autori:Tung C.H., Pey K.L., Tang L.J., Radhakrishnan M.K., Lin W.H., Palumbo F., Lombardo S./titolo:Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient/doi:/rivista:Applied physics letters/anno:2003/pagina_da:2223/pagina_a:2225/intervallo_pagine:2223–2225/volume:83
A physical model has been developed which complies with the experimental observation on the failure mechanism of ultrathin gate oxide breakdown during constant voltage stress. Dynamic equilibrium needs to be established between the percolation conduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::b7a6b7520eec309b1c67a17d6e7fe791
https://publications.cnr.it/doc/35446
https://publications.cnr.it/doc/35446
Publikováno v:
Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743); 2004, p57-60, 4p
Autor:
Pey, K.L., Tung, C.H., Tang, L.J., Ranjan, R., Radhakrishnan, M.K., Lin, W.H., Lombardo, S., Palumbo, F.
Publikováno v:
Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743); 2004, p11-16, 6p
Autor:
Ranjan, R., Pey, K.L., Tang, L.J., Tung, C.H., Groeseneken, G., Radhakrishnan, M.K., Kaczer, B., Degraeve, R., De Gendt, S.
Publikováno v:
Proceedings of the 2004 IEEE International Reliability Physics Symposium; 2004, p347-352, 6p
Publikováno v:
Proceedings of the 2004 IEEE International Reliability Physics Symposium; 2004, p117-121, 5p
Autor:
Radhakrishnan, M.K.
Publikováno v:
Proceedings of the 17th International Conference on VLSI Design; 2004, p805-808, 4p