Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Radek Roucka"'
Autor:
Matthew Sysak, Radek Roucka, Manan Raval, Fernando Luna, Sally El-Henawy, Johnathon Frey, Chen Li, Chong Zhang, Sriharsha Kota Pavan, Asif Anwar Baig Mirza, Li-fan Yang, Mark Wade, Chen Sun
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e0eb98434d1b7912223745690525f16
https://doi.org/10.23919/islc52947.2022.9943390
https://doi.org/10.23919/islc52947.2022.9943390
Autor:
Kaveh Hosseini, Edwin Kok, Sergey Y. Shumarayev, Daniel Jeong, Allen Chan, Austin Katzin, Songtao Liu, Radek Roucka, Manan Raval, Minh Mac, Chia-Pin Chiu, Thungoc Tran, Kumar Abhishek Singh, Sangeeta Raman, Yanjing Ke, Chen Li, Li-Fan Yang, Paulo Chao, Haiwei Lu, Fernando Luna, Xiaoqian Li, Tim Tri Hoang, Arnab Sarkar, Asako Toda, Ravi Mahajan, Nitin Deshpande, Conor O'Keeffe, Uma Krishnamoorthy, Vladimir Stojanovic, Chris Madden, Chong Zhang, Matt Sysak, Pavan Bhargava, Chen Sun, Mark Wade
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f822ffb5bae210bb30dea3887c1ae5fd
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830221
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830221
Autor:
Matthew Sysak, Radek Roucka, Songtao Liu, Chen Li, Fernando Luna, John Frey, Manan Raval, Chong Zhang, Li-Fan Yang, Mark Wade, Chen Sun
Publikováno v:
Optical Interconnects XXII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64723c11aa33b595a459933f5465f0cb
https://doi.org/10.1117/12.2609041
https://doi.org/10.1117/12.2609041
Autor:
Mikhail Naydenkov, Radek Roucka, Sabeur Siala, Philip Dowd, Aymeric Maros, Ding Ding, Ferran Suarez, Ligang Gao
Publikováno v:
Optical Components and Materials XVII.
Emerging applications in sensing, LIDAR, spectroscopy, and SWIR imaging require photodetectors operating at wavelengths beyond the range of silicon technology and that can be produced cost-effectively for very high-volume consumer and commercial mark
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad94cf2b9d3aacaf429078be0fb25b64
https://doi.org/10.1117/12.2546295
https://doi.org/10.1117/12.2546295
Autor:
Radek Roucka, Markus Fuhrer, Andrew G. Clark, Rick Hoffman, Andrew Johnson, Nicholas J. Ekins-Daukes, T. Wilson, David Begarney, Tomos Thomas
Publikováno v:
IEEE Journal of Photovoltaics. 6:1025-1030
SiGeSn ternary alloys offer a means to fabricate a 1.0-eV subcell junction for inclusion in a multijunction solar cell. The main advantage of the SiGeSn alloy is a tuneable bandgap energy and variable lattice parameter, enabling the material to be in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce6b3c7136c4cb4aa30a42751555818e
https://doi.org/10.1109/jphotov.2016.2559785
https://doi.org/10.1109/jphotov.2016.2559785
Autor:
Sathya Chary, Ferran Suarez, Ting Liu, Ewelina N. Lucow, Radek Roucka, T. Bilir, Jordan R. Lang, L. Zhang, Sabeur Siala, E. Pickett, I. Aeby, Arsen Sukiasyan
Publikováno v:
E3S Web of Conferences, Vol 16, p 03006 (2017)
A sub-cell with bandgap of around 1 eV is required to improve the efficiency of multi-junction solar cells beyond what is possible with legacy triple-junction architectures [1]. Solar Junction Corporation has been focused since 2007 on the developmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f64a8602324620efad61d296122929e
https://doaj.org/article/e0932f66b75d4bae9bc081c6f14196a7
https://doaj.org/article/e0932f66b75d4bae9bc081c6f14196a7
Publikováno v:
ECS Transactions. 50:1065-1071
Growth of GaN epilayers on silicon (111) is achieved by using a rare earth oxide buffer layer technology. The use of the REO material system allows strain engineering of the silicon wafers prior to GaN growth in order to mitigate stresses formed duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a44476dd34ea6747f77facb0394fda49
https://doi.org/10.1149/05009.1065ecst
https://doi.org/10.1149/05009.1065ecst
Autor:
Tomos Thomas, Nicholas J. Ekins-Daukes, Andrew G. Clark, Andrew Johnson, Markus Fuhrer, David Begarney, Radek Roucka, T. Wilson, Rick Hoffman
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
The performance of quad-junction Ge based III-V multi-junction solar cells depends upon successful integration of a 1.0eV sub-cell into the existing InGaP/In 0.01 GaAs/Ge stack. The SiGeSn ternary alloy offers a means to fabricate a lattice-matched,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cfef786ab504e956e7fe90e27427063
https://doi.org/10.1109/pvsc.2016.7750062
https://doi.org/10.1109/pvsc.2016.7750062
Autor:
Markus Fuhrer, Tomos Thomas, Rick Hoffman Jnr., Radek Roucka, Andrew D. Johnson, Nicholas J. Ekins-Daukes, Thomas E. Wilson, Andrew G. Clark, David Begarney
Publikováno v:
AIP Conference Proceedings.
Multi-junction photovoltaic technologies lead the way to achieving ultra-high power conversion efficiencies for both space based and terrestrial concentrator applications. However, realizing a lattice matched quad-junction solar cell remains challeng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be8ad74e3fab73727e201e2debd3640
https://doi.org/10.1063/1.4962096
https://doi.org/10.1063/1.4962096
Autor:
David Williams, Erdem Arkun, Andrew G. Clark, Radek Roucka, Rytis Dargis, Robin Smith, Michael S. Lebby
Publikováno v:
physica status solidi c. 9:2031-2035
Lattice engineering by combining multilayer binary (Gd2O3 and La2O3) and ternary (ErxNd1-x)2O3 rare earth oxide layers makes possible the accommodation of lattice mismatch between the silicon substrate and the grown semiconductor layer for semiconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::185faa2275309184aa286577f837b228
https://doi.org/10.1002/pssc.201200255
https://doi.org/10.1002/pssc.201200255