Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Radcliffe, A. D. B."'
Publikováno v:
Semicond. Sci.Technol. v16, 386 (2001)
This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour as a funct
Externí odkaz:
http://arxiv.org/abs/cond-mat/0103283
This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior as a func
Externí odkaz:
http://arxiv.org/abs/cond-mat/0002436
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Aeronautics and Astronautics, 2002.
Includes bibliographical references (p. 111-112).
by Andrew D.B. Radcliffe.
S.M.
Includes bibliographical references (p. 111-112).
by Andrew D.B. Radcliffe.
S.M.
Externí odkaz:
http://hdl.handle.net/1721.1/82234
Publikováno v:
Semiconductor Science & Technology; 2001, Vol. 16 Issue 5, p386-393, 8p
