Výsledky vyhledávání - "Radchenko, Taras M."

Report

Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap

Autor: Solomenko, Anastasiia G., Sahalianov, Ihor Y., Radchenko, Taras M., Tatarenko, Valentyn A.

Publikováno v: Scientific Reports, Vol. 13, 13444 (2023)

We study the effects of the uniaxial tensile strain and shear deformation as well as their combinations on the electronic properties of single-layer black phosphorene. The evolutions of the strain-dependent band gap are obtained using the numerical c

Externí odkaz: http://arxiv.org/abs/2306.05163

Zobrazit plný text záznamu

Plný text ve formátu HTML

Report

Effect of weak impurities on conductivity of uniaxially strained graphene

Autor: Sagalianov, Igor Yu., Prylutskyy, Yuriy I., Radchenko, Taras M., Tatarenko, Valentyn A.

The main goal of our study was investigation of the influence of the deformations (sufficiently large for the establishing the non-zero gap) on electrotransport properties of impure graphene. To achieve this purpose, we implemented the simulation pac

Externí odkaz: http://arxiv.org/abs/1712.08843

Zobrazit plný text záznamu

Report

Strain- and Adsorption-Dependent Electronic States and Transport or Localization in Graphene

Autor: Radchenko, Taras M., Sagalianov, Igor Yu., Tatarenko, Valentyn A., Prylutskyy, Yuriy I., Szroeder, Paweł, Kempiński, Mateusz, Kempiński, Wojciech

Publikováno v: Springer Proceedings in Physics: Nanooptics, Nanophotonics, Nanostructures, and Their Applications, vol. 210, Chapter 3 (2018)

The chapter generalizes results on influence of uniaxial strain and adsorption on the electron states and charge transport or localization in graphene with different configurations of imperfections (point defects): resonant (neutral) adsorbed atoms e

Externí odkaz: http://arxiv.org/abs/1712.03424

Zobrazit plný text záznamu