Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Rachid FATES"'
Publikováno v:
Medžiagotyra, Vol 30, Iss 1, Pp 3-7 (2024)
In this paper, we report the modelling of quantum capacitance in both single-layer and bilayer graphene devices to investigate the temperature dependence. The model includes the existence of electron and hole puddles due to local fluctuations of the
Externí odkaz:
https://doaj.org/article/a47add04b0864d5c824592a700d14dae
Publikováno v:
Medžiagotyra, Vol 29, Iss 4, Pp 421-426 (2023)
This paper provides electrical characterization of single layer graphene ribbon devices defined as back-gated graphene transistors. The two-terminal back-gated graphene ribbon devices were fabricated on a conventional Si substrate covered by a 90 nm-
Externí odkaz:
https://doaj.org/article/c87417095b764918bd6aa531b0db95bf
Autor:
Rachid Fates, Jean-Pierre Raskin
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 3, Iss 3, Pp 366-370 (2018)
We experimentally investigate the carrier transport in back-gated graphene ribbons. The ribbons are monolayer graphene formed by the chemical vapor deposition process and transferred on the SiO2/Si substrate. Electrical measurements show that two cat
Externí odkaz:
https://doaj.org/article/99301be9d0534ff7892407ff042a9340
Publikováno v:
Diamond and Related Materials. 136:109919
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b18107baf3dcea94180063cf56c566f0
https://doi.org/10.1016/j.diamond.2023.109919
https://doi.org/10.1016/j.diamond.2023.109919
Publikováno v:
Carbon. 149:390-399
In this study, we experimentally investigate the evolution of the Raman spectrum of single, bi- and tri-layer graphene as function of gate voltage induced doping. In single layer graphene, the observed results are in agreement with the literature. Wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cb2f83da92868a1467e5216d52da4de
https://doi.org/10.1016/j.carbon.2019.04.078
https://doi.org/10.1016/j.carbon.2019.04.078
Publikováno v:
Superlattices and Microstructures. 142:104758
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d17000daa487d481082033bf9a64826c
https://doi.org/10.1016/j.spmi.2016.12.054
https://doi.org/10.1016/j.spmi.2016.12.054
Publikováno v:
Materials Science in Semiconductor Processing. 24:278-281
In this work, we propose an analytical model allowing the calculation of nanocrystalline silicon thin film transistors surface potential by considering a granular morphology of silicon nanocrystallites forming the channel. Results show that, accordin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::173b0ffe9569e737c3fc3cd044bdd9c3
https://doi.org/10.1016/j.mssp.2014.03.025
https://doi.org/10.1016/j.mssp.2014.03.025