Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Rachid Daineche"'
Autor:
Georges Landa, Kevin Payen, Anne Hémeryck, Amani Migaou, Mathilde Guiltat, Sébastien Vizzini, Rachid Daineche, Brice Sarpi
Publikováno v:
Journal of Chemical Physics
Journal of Chemical Physics, American Institute of Physics, 2016, 144 (19), pp.194708. ⟨10.1063/1.4949764⟩
Journal of Chemical Physics, 2016, 144 (19), pp.194708. ⟨10.1063/1.4949764⟩
Journal of Chemical Physics, American Institute of Physics, 2016, 144 (19), pp.194708. ⟨10.1063/1.4949764⟩
Journal of Chemical Physics, 2016, 144 (19), pp.194708. ⟨10.1063/1.4949764⟩
International audience; First principles calculations, scanning tunneling microscopy, and Auger spectroscopy experiments of the adsorption of Mg on Ag(111) substrate are conducted. This detailed study reveals that an atomic scale controlled depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3de88f78c88971d2fca2061f07b7def
https://hal.archives-ouvertes.fr/hal-01407766/file/MgOnAg111-Hemeryck-Author.pdf
https://hal.archives-ouvertes.fr/hal-01407766/file/MgOnAg111-Hemeryck-Author.pdf
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2016, 361, pp.259-264. ⟨10.1016/j.apsusc.2015.11.176⟩
Applied Surface Science, 2016, 361, pp.259-264. ⟨10.1016/j.apsusc.2015.11.176⟩
Applied Surface Science, Elsevier, 2016, 361, pp.259-264
Applied Surface Science, Elsevier, 2016, 361, pp.259-264. ⟨10.1016/j.apsusc.2015.11.176⟩
Applied Surface Science, 2016, 361, pp.259-264. ⟨10.1016/j.apsusc.2015.11.176⟩
Applied Surface Science, Elsevier, 2016, 361, pp.259-264
International audience; An ultra-thin MgO film of two monolayers (ML) was successfully grown onto Ag(111) by repeating twice RT adsorption of Mg atomic monolayer, RT oxidation and 725 K thermal annealing under UHV conditions. Using Auger electron spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdf52846ee18e268a41dd3c0b7da5f94
https://hal.archives-ouvertes.fr/hal-01407771
https://hal.archives-ouvertes.fr/hal-01407771
Autor:
J. Perrin-Toinin, Sébastien Vizzini, Rachid Daineche, N. Rochdi, M. Djafari Rouhani, M. Bertoglio, Brice Sarpi, Christophe Girardeaux, A. Baronnet, Anne Hémeryck, Michael Bocquet
Publikováno v:
Surface Science Letters
Surface Science Letters, 2015, 642, pp.L1-L5. ⟨10.1016/j.susc.2015.08.003⟩
Surface Science Letters, Elsevier, 2015, 642, pp.L1-L5. ⟨10.1016/j.susc.2015.08.003⟩
Surface Science Letters, 2015, 642, pp.L1-L5. ⟨10.1016/j.susc.2015.08.003⟩
Surface Science Letters, Elsevier, 2015, 642, pp.L1-L5. ⟨10.1016/j.susc.2015.08.003⟩
International audience; Surface interfaces of thin magnesium oxide films elaborated onto Si(100)–(2 × 1) substrates were characterized using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, atomic force microscopy, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f302e84ab182faa4273c1d38645a5caa
https://hal.laas.fr/hal-01496546
https://hal.laas.fr/hal-01496546
Autor:
Sarpi, B., Rochdi, N., Rachid Daineche, Bertoglio, M., Christophe Girardeaux, Baronnet, A., Perrin-Toinin, J., Michael Bocquet, Djafari Rouhani, M., Anne HEMERYCK, Vizzini, S.
Publikováno v:
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2015, 642, pp.L1-L5
HAL
Surface Science
Surface Science, Elsevier, 2015, 642, pp.L1-L5
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2015, 642, pp.L1-L5
HAL
Surface Science
Surface Science, Elsevier, 2015, 642, pp.L1-L5
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bf13258e3cee9e25fd6f6d1dea0bbf62
https://hal-amu.archives-ouvertes.fr/hal-02044833
https://hal-amu.archives-ouvertes.fr/hal-02044833
Publikováno v:
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2015, 33 (3), pp.030601. ⟨10.1116/1.4916237⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2015, 33 (3), pp.030601. ⟨10.1116/1.4916237⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2015, 33 (3), pp.030601. ⟨10.1116/1.4916237⟩
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2015, 33 (3), pp.030601. ⟨10.1116/1.4916237⟩
International audience; A mineral (celadonite, kaolinite) nanometer-thick particle deposited on a flat carbon film or at the apex of a carbon fiber provides electron emission at low applied fields. Voltage and time dependences of the emission intensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::364434879b850922d9a7e81f237d174b
https://hal.archives-ouvertes.fr/hal-01140819
https://hal.archives-ouvertes.fr/hal-01140819
Autor:
M. El Kurdi, Philippe Boucaud, T. K. P. Luong, M.A. Zrir, Omar Abbes, Matthieu Petit, Vasile Heresanu, Thi-Giang Le, Rachid Daineche, J. Murota, Mathieu Stoffel, M. T. Dau, Hervé Rinnert, V. Le Thanh, A. Ghrib
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2014, 557, pp.70-75. ⟨10.1016/j.tsf.2013.11.027⟩
Thin Solid Films, 2014, 557, pp.70-75. ⟨10.1016/j.tsf.2013.11.027⟩
Thin Solid Films, Elsevier, 2014, 557, pp.70-75. ⟨10.1016/j.tsf.2013.11.027⟩
Thin Solid Films, 2014, 557, pp.70-75. ⟨10.1016/j.tsf.2013.11.027⟩
We have combined numerous characterization techniques to investigate the growth of tensile-strained and n -doped Ge films on Si(001) substrates by means of solid-source molecular-beam epitaxy. The Ge growth was carried out using a two-step growth met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37b68eb0c79c4cea708931121b808c14
https://hal.archives-ouvertes.fr/hal-00975160
https://hal.archives-ouvertes.fr/hal-00975160
Autor:
M. Xu, Bernard Pichaud, Esidor Ntsoenzok, B. Hakim, Gabrielle Regula, Rachid Daineche, Erwan Oliviero
Publikováno v:
Thin Solid Films. 518:2354-2356
He, Si and B implantation are successively combined in order to produce ultra shallow junctions (USJs). Si is implanted at 180 keV to create a ‘vacancy-rich’ layer. Such a layer is however followed by a deeper interstitial rich one. He implantati
Stacking faults in intrinsic and N-doped 4HSiC: true influence of the N-doping on their multiplicity
Autor:
Bernard Pichaud, Rachid Daineche, Gabrielle Regula, Thomas Neisius, M. Lancin, Sandrine Juillaguet
Publikováno v:
Philosophical Magazine
Philosophical Magazine, Taylor & Francis, 2013, 93 (10-12), pp.1317-1325. ⟨10.1080/14786435.2012.745018⟩
Philosophical Magazine, Taylor & Francis, 2013, 93 (10-12), pp.1317-1325. ⟨10.1080/14786435.2012.745018⟩
The stacking fault multiplicity was studied in intrinsic and N-doped (0001) 4H–SiC. The defects, nucleated by a scratch on the sample surface, expanded during annealing at 973 K. The stacking width was determined by high-resolution transmission ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7fa5b6cd98e25955c13d067ca8f71171
https://hal.archives-ouvertes.fr/hal-01936279
https://hal.archives-ouvertes.fr/hal-01936279
Autor:
Olivier Palais, Frederic Milesi, Laurent Ottaviani, Michel Kazan, Blandine Courtois, Rachid Daineche, Frank Torregrosa, Stéphane Biondo, Julian Duchaine
Publikováno v:
Advanced Materials Research
Advanced Materials Research, Trans Tech Publications, 2011, 324, pp.265-268. ⟨10.4028/www.scientific.net/AMR.324.265⟩
Advanced Materials Research, 2011, 324, pp.265-268. ⟨10.4028/www.scientific.net/AMR.324.265⟩
Advanced Materials Research, Trans Tech Publications, 2011, 324, pp.265-268. ⟨10.4028/www.scientific.net/AMR.324.265⟩
Advanced Materials Research, 2011, 324, pp.265-268. ⟨10.4028/www.scientific.net/AMR.324.265⟩
International audience; This paper focuses on the formation of thin n+p junctions in p-type Silicon Carbide (SiC) epitaxial layers using two kinds of Nitrogen implantations. The standard beam ion implantations and PULSIONTM processes were performed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a43a5118e2c9fdd375ed648cda4a361e
https://hal-amu.archives-ouvertes.fr/hal-03350220
https://hal-amu.archives-ouvertes.fr/hal-03350220
Autor:
Julian Duchaine, Mihai Lazar, Wilfried Vervisch, Rachid Daineche, Stéphane Biondo, Dominique Planson, Frederic Milesi, Laurent Ottaviani, Olivier Palais, Frank Torregrosa
Publikováno v:
Proceedings of the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications
HeteroSiC & WASMPE 2011
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩
Materials Science Forum
Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩
HeteroSiC & WASMPE 2011
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩
Materials Science Forum
Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩
In this paper, we deal with the study of Ultra Violet (UV) photodetector device based on SiC material undergoing a p-i-n structure process. Current density-voltage (J-V) measurements in reverse and forward bias, are performed on the UV photodetector
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7daec684a092d6fbd07906f05d0ad3a
https://hal.archives-ouvertes.fr/hal-00661511
https://hal.archives-ouvertes.fr/hal-00661511