Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Rached Jaafar"'
Autor:
Liangbo Liang, Neerav Kharche, Xinliang Feng, Carlos Sánchez-Sánchez, Rached Jaafar, Pascal Ruffieux, Okan Deniz, Klaus Müllen, Roman Fasel, Vincent Meunier
Publikováno v:
Chemical Communications
Electronic and thermal properties of chevron-type graphene nanoribbons can be widely tuned, making them interesting candidates for electronic and thermoelectric applications. Here, we use post-growth silicon intercalation to unambiguously access nano
Autor:
Toshikazu Hirao, Pascal Ruffieux, Toru Amaya, Giovanni Bussi, Carlo A. Pignedoli, Rached Jaafar, Roman Fasel, Oliver Groening, Kamel Aït-Mansour
Publikováno v:
Journal of the American Chemical Society
Bowl-shaped pi-conjugated compounds offer the possibility to study curvature-dependent host-guest interactions and chemical reactivity in ideal model systems. For surface-adsorbed pi bowls, however, only conformations with the bowl opening pointing a
Autor:
Ahmed Mehdaoui, Rached Jaafar, I. Maafa, G. Garreau, Dominique Berling, C. Uhlaq-Bouillet, A. Florentin, E. Deny, Samar Hajjar-Garreau, Candido Pirri
Publikováno v:
Thin Solid Films. 545:257-266
The molecular-beam-epitaxy growth of Fe–Ge/Ge/Fe–Ge trilayers on Ge(111) wafers has been investigated as a function of three parameters: the Ge spacer coverage, the substrate temperature (TD) and the dynamic atomic hydrogen (H) exposure during th
Autor:
Rached Jaafar, Marco Bieri, Kamel Aït-Mansour, Pascal Ruffieux, Matthias Treier, Pierangelo Gröning, Oliver Gröning, Roman Fasel
Publikováno v:
The Journal of Physical Chemistry C. 113:8407-8411
We report on the high effectiveness of the Ag/Pt(111) dislocation network template for guiding the formation of well-ordered perylenetetracarboxylic diimide (PTCDI) molecular nanostructures due to its laterally strong inhomogeneous properties. Numero
Autor:
Roman Fasel, Pascal Ruffieux, Xinliang Feng, Klaus Müllen, Stephan Blankenburg, Carlo A. Pignedoli, Jinming Cai, Daniele Passerone, Rached Jaafar
Publikováno v:
ACS NANO
Graphene nanoribbons-semiconducting quasi-one-dimensional graphene structures-have great potential for the realization of novel electronic devices. Recently, graphene nanoribbon heterojunctions-interfaces between nanoribbons with unequal band gaps-ha
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 81, pp.155423. ⟨10.1103/PHYSREVB.81.155423⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.155423. ⟨10.1103/PHYSREVB.81.155423⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 81, pp.155423. ⟨10.1103/PHYSREVB.81.155423⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.155423. ⟨10.1103/PHYSREVB.81.155423⟩
We have studied the growth and magnetic properties of thin Fe-Ge films synthesized (codeposited at room temperature and postannealed at $250\text{ }\ifmmode^\circ\else\textdegree\fi{}\text{C}$) on Ge(111) wafers versus stoichiometry. Morphology and c
Autor:
Stephan Blankenburg, Rached Jaafar, Marco Bieri, Moussa Saleh, Matthias Muoth, Roman Fasel, Pascal Ruffieux, Jinming Cai, Thomas Braun, Ari P. Seitsonen, Klaus Müllen, Xinliang Feng
Publikováno v:
NATURE
Graphene nanoribbons, narrow straight-edged strips of the single-atom-thick sheet form of carbon, are predicted to exhibit remarkable properties, making them suitable for future electronic applications. Before this potential can be realized, more che
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67a3281d9b48dbef6e6a5e00a520881c
Autor:
Candido Pirri, S. Zabrocki, Ahmed Mehdaoui, G. Garreau, Rached Jaafar, Dominique Berling, J.L. Bubendorff, S. Hajjar
Publikováno v:
Surface Science
Surface Science, Elsevier, 2009, 603, pp.373-379. ⟨10.1016/j.susc.2008.11.026⟩
Surface Science, Elsevier, 2009, 603, pp.373-379. ⟨10.1016/j.susc.2008.11.026⟩
The growth of thin Fe films deposited at oblique incidence on an iron silicide template onto Si(1 1 1) single crystal has been investigated as a function of Fe thickness (0 t Fe ⩽ 180 monolayers (MLs)) and incidence angle (0 ⩽ θ ⩽ 80°). The g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b71e248c3b3b7083009992bfa1f20439
https://hal.archives-ouvertes.fr/hal-00404861
https://hal.archives-ouvertes.fr/hal-00404861
Autor:
Ahmed Mehdaoui, Rached Jaafar, J.L. Bubendorff, G. Garreau, C. Uhlaq-Bouillet, Dominique Berling, Y. Nehme, Candido Pirri
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2008, 93, pp.033114. ⟨10.1063/1.2961007⟩
Applied Physics Letters, American Institute of Physics, 2008, 93, pp.033114. ⟨10.1063/1.2961007⟩
International audience; We report on the epitaxial growth of ultrathin ferromagnetic Fe1.7Ge layers on Ge111 wafer. These single crystal intermetallic layers adopt the InNi2 B82 crystallographic structure. They are ferromagnetic with a Curie temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2b9b9b9da37d94767da7f2dfd866f3f
https://hal.archives-ouvertes.fr/hal-00404970
https://hal.archives-ouvertes.fr/hal-00404970
Autor:
Ahmed Mehdaoui, Rached Jaafar, Dominique Berling, Carmelo Pirri, G. Gewinner, Samar Hajjar, G. Garreau, Jean-Luc Bubendorff, Stephan Zabrocki
Publikováno v:
EPL-Europhysics Letters
EPL-Europhysics Letters, European Physical Society/EDP Sciences/Società Italiana di Fisica/IOP Publishing, 2006, 75 (1), pp.119-125
EPL-Europhysics Letters, European Physical Society/EDP Sciences/Società Italiana di Fisica/IOP Publishing, 2006, 75 (1), pp.119-125
Ferromagnetic films evaporated at oblique incidence show invariably an uniaxial in-plane magnetic anisotropy component with easy axis perpendicular to the incidence plane. Scanning Tunneling Microscopy (STM) images reveal that oblique deposition resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87f23248063c76fb7a110ff9afb66ca7
https://hal.archives-ouvertes.fr/hal-00136692
https://hal.archives-ouvertes.fr/hal-00136692