Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Rached Hajji"'
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
This paper presents a wideband Doherty Power Amplifier (DPA) suitable for Band-1 and Band-3 LTE Basestation applications, using Qorvo's 0.25um GaN on SiC High-Voltage technology. This DPA puts out 85W Pavg and 500W peak power at the Doherty 50-Ω out
Autor:
Oleh Krutko, J. Hitt, Joe Delaney, Gary Burgin, J. Nelson, Larry Witkowski, Craig Steinbeiser, C. Suckling, Thomas Landon, Rached Hajji
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:2218-2228
A two-way symmetrical Doherty amplifier exhibiting 250 W saturated power has been developed using high-voltage HBT (HVHBT) GaAs technology biased at 28 V on the collector. Greater than 57% collector efficiency at 50 W (47 dBm) average output power ha
Publikováno v:
2014 9th European Microwave Integrated Circuit Conference.
Autor:
Thomas Landon, Roger Branson, Gary Burgin, Jeff Dekosky, Joe Delaney, Jeff Gengler, Rached Hajji, Arwyn Roberts
Publikováno v:
2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).
This paper describes TriQuint's platform product offering for the emerging pico-cell base station market. The TGA2450 is a highly integrated 50 ohm in/out power amplifier module that offers high efficiency performance in a small form factor. TGA2450
Publikováno v:
Microwave and Optical Technology Letters. 10:218-222
A generalized calibration and de-embedding technique for reflection-based S-parameter measurements of microwave devices is proposed. This technique allows two-port calibration of a network analyzer directly from the embedded reflection coefficient me
Publikováno v:
Microwave and Optical Technology Letters. 9:130-133
A new nonlinear empirical model that can be applied to the collector current source of power HBT devices and to the drain current source of power MESFETs is presented. The model includes the self-heating effects present in both HBT and MESFET devices
Autor:
Oleh Krutko, Joe Delaney, Roger Branson, Thomas Landon, Larry Witkowski, Gary Burgin, Preston Page, Craig Steinbeiser, Rached Hajji
Publikováno v:
2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications.
A 2-way symmetrical Doherty amplifier achieving 600W saturated power has been developed using Generation 2 High-Voltage HBT (Gen 2 HVHBT) GaAs technology. In this paper we will show the development method used for this design work. From module optimi
Autor:
Joe Delaney, Oleh Krutko, Preston Page, Larry Witkowski, Roger Branson, Craig Steinbeiser, Thomas Landon, Gary Burgin, Rached Hajji
Publikováno v:
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
A two stage high power amplifier consisting of a 325W High Voltage HBT (HVHBT) Doherty final and a 20W LDMOS Doherty driver has been developed for use in wireless basestation applications. The lineup achieved greater than 54% PAE at 75W (48.77dBm) av
Autor:
Thomas Landon, Preston Page, Craig Steinbeiser, Craig Hall, Roger Branson, Larry Witkowski, Rached Hajji, Joe Delaney, Sam Wey, Oleh Krutko
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
A new generation of High Voltage Heterojunction Bipolar Transistor (HVHBT) technology was developed for base station high power amplifiers and multi-stage driver amplifiers. This is an improved version of previously reported InGaP/GaAs HBT capable of
Publikováno v:
Microwave and Optical Technology Letters. 5:580-585
This article presents a method of transistor parameter extraction using multiharmonic Load-Pull (MHLP) measurements completed with modified harmonic balance calculations. An advantage of this approach is that the parameters of the nonlinear elements