Extremely low non-alloyed specific contact resistance ρc (10-8 Ω cm2) to metalorganic molecular beam epitaxy grown super heavily C-doped (1021 cm-3) p++GaAs.

Autor: Usagawa, T., Kobayashi, M., Mishima, T., Rabinzohn, P. D., Ihara, A., Kawata, M., Yamada, T., Tokumitsu, E., Konagai, M., Takahashi, K.

Publikováno v: Journal of Applied Physics; 6/15/1991, Vol. 69 Issue 12, p8227, 6p, 2 Diagrams, 1 Chart, 6 Graphs