Study of boron doped amorphous silicon lightly hydrogenated prepared by DC magnetron sputtering for infrared detectors applications

Autor: Khadidja Ketroussi, Hadj Yahia Seba, Lutfi Ozyuzer, A. Rahal, S. Tata, Rabah Cherfi, L. Chabane

Publikováno v: Infrared Physics & Technology. 113:103556

The objective of this study is to investigate the effect of boron doping concentration on the bolometric properties of lightly hydrogenated amorphous silicon doped with boron (a-Si: H(B)) films. Thin film a-Si: H(B) samples with different boron conce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb50cafc78e0128f6f6218f412705d6d
https://doi.org/10.1016/j.infrared.2020.103556

Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

Autor: Rabah Cherfi, A. Boukezzata, Noureddine Gabouze, Amer Brighet, A. Cheriet, Aissa Keffous, Y. Belkacem, Yacine Boukennous, Lakhdar Guerbous, Hamid Menari, Isa Menous, Mohamed Kechouane

Publikováno v: Applied Surface Science. 256:4591-4595

Hydrogenated amorphous SiC films (a-Si1−xCx:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H–SiC). The deposited a-Si1−xCx:H film

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40ea0d628388d6ed46408aab686f067c
https://doi.org/10.1016/j.apsusc.2010.02.054

Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties

Autor: N. Khelifati, Rabah Cherfi, Aissa Keffous, Mohamed Kechouane, A. Rahal

Publikováno v: Materials Science Forum. 609:81-85

Boron-doped hydrogenated amorphous silicon (a-Si:H(B)) thin films have been prepared by DC magnetron sputtering technique under argon and hydrogen mixture. The films were deposited at various hydrogen pressures between 0 and 9 10-5 mbar. The boron co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f4d0dd3bfdd1052a79fc933b610c8ed4
https://doi.org/10.4028/www.scientific.net/msf.609.81

Stability of Microcrystalline Silicon TFTs

Autor: Khalid Kandoussi, Rabah Cherfi, Abdelkrim Fedala, Nathalie Coulon, Khaled Belarbi, Tayeb Mohammed-Brahim, Claude Simon

Publikováno v: Thin Film Transistors Technologies IX
214ndMeeting of The Electrochemical Society
214ndMeeting of The Electrochemical Society, Oct 2008, Honolulu (Hawaii), United States
ECS Transactions
ECS Transactions, 2008, 16 (9), pp.121-130
ECS Transactions, Electrochemical Society, Inc., 2008, 16 (9), pp.121-130

Stability of microcrystalline silicon (µc-Si:H) Top-Gate TFTs processed at T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66247d659a3a6490bcbf84449a891dd1
https://doi.org/10.1149/1.2980540

N- and P-type top-gate microcrystalline silicon TFTs processed at low temperature (T<200° C) on the same glass substrate

Autor: Khaled Belarbi, Nathalie Coulon, Abdelkrim Fedala, Claude Simon, Khalid Kandoussi, Tayeb Mohammed-Brahim, Rabah Cherfi, Ismaïl Souleiman

Publikováno v: physica status solidi (c)
physica status solidi (c), Wiley, 2010, 7 (3-4), pp.1148-1151. ⟨10.1002/pssc.200982690⟩
23nd International Conference on Amorphous and Nanocrystalline Semiconductors
23nd International Conference on Amorphous and Nanocrystalline Semiconductors, Aug 2009, Utrecht, Netherlands
physica status solidi (c), 2010, 7 (3-4), pp.1148-1151. ⟨10.1002/pssc.200982690⟩

Low temperature deposited RF-PECVD undoped, arsenic and boron doped μc-Si:H films are used to fabricate the N-type and P-type TFTs on the same glass substrate. The transistors have a coplanar top gate configuration and a silicon nitride as gate insu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a0528d1087155b8edc2ae65ab5e70e9
https://hal.archives-ouvertes.fr/hal-00506742