Zobrazeno 1 - 10
of 225
pro vyhledávání: '"RTS NOISE"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 420-431 (2018)
In MOS transistors, low-frequency noise phenomena such as random telegraph signal (RTS), burst, and flicker or 1/f noise are usually attributed to the random nature of the trap state of defects present at the gate Si-SiO2 interface. In a previous wor
Externí odkaz:
https://doaj.org/article/7b15b4439fe64a069c2f3cf051405ab1
Autor:
Sung-Kyu Kwon, Hyuk-Min Kwon, In-Shik Han, Jae-Hyung Jang, Sun-Ho Oh, Hyeong-Sub Song, Byoung-Seok Park, Yi-Sun Chung, Jung-Hwan Lee, Si-Bum Kim, Ga-Won Lee, Hi-Deok Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 808-814 (2018)
The concurrent effect of fluorine implantation with various energy and dose on reliability and low-frequency noise characteristics of p-MOSFETs was investigated. The $\Delta $ VT degradation that represents device lifetime of p-MOSFETs with fluorine
Externí odkaz:
https://doaj.org/article/2a406b49b2d840f8b0cb65bc20a19421
Publikováno v:
Dianzi Jishu Yingyong, Vol 44, Iss 8, Pp 44-46 (2018)
Power metal oxide semiconductor FET(P-MOSFET)is the core device that forms the power communication power，its reliability directly affects the safe and stable operation of power communication. Random telegraph signal(RTS) noise is a sensitive parame
Externí odkaz:
https://doaj.org/article/873a0e453abf467f872d4ccf86a9a765
Akademický článek
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Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 6, Pp 481-486 (2015)
Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise. Random activity of trapping and de-trapping of mobile
Externí odkaz:
https://doaj.org/article/d379ae59ad1c4c5c99a1b676c1e8d125
Publikováno v:
Sensors, Vol 14, Iss 1, Pp 1528-1543 (2014)
In extremely low-light conditions, random telegraph signal (RTS) noise and dark current white defects become visible. In this paper, a multi-aperture imaging system and selective averaging method which removes the RTS noise and the dark current white
Externí odkaz:
https://doaj.org/article/b6469bc0f009407785af806e57f407be
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
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Publikováno v:
Biblioteca Digital de Teses e Dissertações da FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
Centro Universitário da Fundação Educacional Inaciana (FEI)
instacron:FEI
This work presents a study on the effects of single interface traps throughout the Junctionless Nanowire Transistor (JNT). The results are obtained by analyzing the Random Telegraph Signal noise of the device, which consists of an exception of the ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2392b321407ab1cfe069f9e7a82dcf78
https://doi.org/10.29292/jics.v15i2.200
https://doi.org/10.29292/jics.v15i2.200
Publikováno v:
Radioengineering, Vol 20, Iss 1, Pp 194-199 (2011)
Low frequency noise was measured in silicon MOSFET and GaN and InGaAs based HFET devices with special emphasis on the RTS noise. The RTS (Random Telegraph Signal) dependence on the biasing conditions and temperature was analyzed in order to obtain ne
Externí odkaz:
https://doaj.org/article/df57bf10e63e4b9bb70f3977753e7cd8