Zobrazeno 1 - 10
of 293
pro vyhledávání: '"ROssella, Francesco"'
Autor:
Baratto, Camilla, Musaev, Egit, Demontis, Valeria, Luin, Stefano, Zannier, Valentina, Sorba, Lucia, FAglia, Guido, Rovati, Luigi, ROssella, Francesco
Epitaxially grown InAs NWs are relevant for electrical sensing applications due to Fermi level pinning at NW surface, thus very sensitive to surrounding environment. While a single NW growth batch consists of millions virtually identical replicas of
Externí odkaz:
http://arxiv.org/abs/2412.17981
Autor:
Prete, Domenic, Demontis, Valeria, Zannier, Valentina, Sorba, Lucia, Beltram, Fabio, Rossella, Francesco
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of realization
Externí odkaz:
http://arxiv.org/abs/2406.16363
Autor:
Peri, Lorenzo, Prete, Domenic, Demontis, Valeria, Zannier, Valentina, Rossi, Francesca, Sorba, Lucia, Beltram, Fabio, Rossella, Francesco
Semiconductor nanostructures hold great promise for high-efficiency waste heat recovery exploiting thermoelectric energy conversion, a technological breakthrough that could significantly contribute to providing environmentally friendly energy sources
Externí odkaz:
http://arxiv.org/abs/2205.05757
Autor:
Viscardi, Loredana a, b, Faella, Enver a, b, Intonti, Kimberly a, b, Giubileo, Filippo b, Demontis, Valeria c, d, Prete, Domenic c, e, Zannier, Valentina c, Sorba, Lucia c, Rossella, Francesco f, Di Bartolomeo, Antonio a, b, ∗
Publikováno v:
In Materials Science in Semiconductor Processing April 2024 173
Autor:
Pezzini, Sergio, Mišeikis, Vaidotas, Pace, Simona, Rossella, Francesco, Watanabe, Kenji, Taniguchi, Takashi, Coletti, Camilla
Publikováno v:
2D Mater. 7, 041003 (2020)
Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer
Externí odkaz:
http://arxiv.org/abs/2005.02284
Autor:
Salimian, Sedighe, Xiang, Shaohua, Colonna, Stefano, Ronci, Fabio, Fosca, Marco, Rossella, Francesco, Beltram, Fabio, Flammini, Roberto, Heun, Stefan
Publikováno v:
Adv. Mater. Interfaces 2020, 1902175
We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices. The Si3N4 f
Externí odkaz:
http://arxiv.org/abs/2004.09170
Akademický článek
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Autor:
Pezzini, Sergio, Miseikis, Vaidotas, Piccinini, Giulia, Forti, Stiven, Pace, Simona, Engelke, Rebecca, Rossella, Francesco, Watanabe, Kenji, Taniguchi, Takashi, Kim, Philip, Coletti, Camilla
The artificial stacking of atomically thin crystals suffers from intrinsic limitations in terms of control and reproducibility of the relative orientation of exfoliated flakes. This drawback is particularly severe when the properties of the system cr
Externí odkaz:
http://arxiv.org/abs/2001.10427
Autor:
Momtaz, Zahra Sadre, Servino, Stefano, Demontis, Valeria, Zannier, Valentina, Ercolani, Daniele, Rossi, Francesca, Rossella, Francesco, Sorba, Lucia, Beltram, Fabio, Roddaro, Stefano
Publikováno v:
Nano Lett. 2020, 20, 3, 1693-1699
We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general tr
Externí odkaz:
http://arxiv.org/abs/1911.10264
Autor:
Wu, Shiyao, Peng, Kai, Battiato, Sergio, Zannier, Valentina, Bertoni, Andrea, Goldoni, Guido, Xie, Xin, Yang, Jingnan, Xiao, Shan, Qian, Chenjiang, Song, Feilong, Sun, Sibai, Dang, Jianchen, Yu, Yang, Beltram, Fabio, Sorba, Lucia, Li, Ang, Li, Bei-bei, Rossella, Francesco, Xu, Xiulai
Publikováno v:
Nano Research, 2019
Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters of the crystal phase structure is of much
Externí odkaz:
http://arxiv.org/abs/1910.08725