Zobrazeno 1 - 10
of 347
pro vyhledávání: '"RIDEAU, D."'
Autor:
Julliard, P.L., Johnsson, A., Zographos, N., Demoulin, R., Monflier, R., Jay, A., Er-Riyahi, O., Monsieur, F., Joblot, S., Deprat, F., Rideau, D., Pichler, P., Hémeryck, A., Cristiano, F.
Publikováno v:
In Solid State Electronics February 2023 200
Autor:
Dollfus, P., Saint-Martin, J., Cazimajou, T., Helleboid, R., Pilotto, A., Rideau, D., Bournel, A., Pala, M.
Publikováno v:
In Solid State Electronics August 2022 194
Publikováno v:
Applied Physics Letters 106, 023508 (2015)
We investigate remote surface scattering (RSR) by the SiO$_2$/HfO$_2$ interface in Fully-Depleted Silicon-on-Insulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between
Externí odkaz:
http://arxiv.org/abs/1504.01881
Publikováno v:
Phys. Rev. B 79, 245201 (2009)
We discuss a model for the on-site matrix elements of the sp3d5s* tight-binding hamiltonian of a strained diamond or zinc-blende crystal or nanostructure. This model features on-site, off-diagonal couplings between the s, p and d orbitals, and is abl
Externí odkaz:
http://arxiv.org/abs/0902.0491
The electronic energy band structure of strained and unstrained Si, Ge and SiGe alloys is examined in this work using thirty-level k.p analysis. The energy bands are at first obtained with ab initio calculations based on the Local-Density-Approximati
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607510
Autor:
Rideau, D., Monceau, P., Currat, R., Requardt, H., Nad, F., Lorenzo, J. E., Brazovskii, S., Detlefs, C., Grubel, G.
Using high-resolution X-ray scattering techniques, we measure the variation, q(x), of the position in reciprocal space of the CDW satellite, in the sliding state, along the length of NbSe_3 whiskers. We show that structural defects and intentionally
Externí odkaz:
http://arxiv.org/abs/cond-mat/0008108
Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements
Autor:
Kriso, C., Triozon, F., Delerue, C., Schneider, L., Abbate, F., Nolot, E., Rideau, D., Niquet, Y.-M., Mugny, G., Tavernier, C.
Publikováno v:
In Solid State Electronics March 2017 129:93-96
Publikováno v:
In Solid State Electronics February 2017 128:10-16
Akademický článek
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Autor:
Soussou, A., Leroux, C., Rideau, D., Toffoli, A., Romano, G., Saxod, O., Bidal, G., Barge, D., Pellissier-Tanon, D., Abbate, F., Tavernier, C., Reimbold, G., Ghibaudo, G.
Publikováno v:
In Microelectronic Engineering September 2013 109:282-285