Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the coupling strength

Autor: Brimont, C., Doyennette, L., Kreyder, G., Réveret, F., Disseix, P., Médard, F., Leymarie, J., Cambril, E., Bouchoule, S., Gromovyi, M., Alloing, B., Rennesson, S., Semond, F., Zúñiga-Pérez, J., Guillet, T.

Publikováno v: Phys. Rev. Applied 14, 054060 (2020)

We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully anal

Externí odkaz: http://arxiv.org/abs/2002.05066

A universal description of III-V/Si epitaxial growth processes

Autor: Lucci, I., Charbonnier, S., Pedesseau, L., Vallet, M., Cerutti, L., Rodriguez, J. -B., Tournie, E., Bernard, R., Letoublon, A., Bertru, N., Corre, A. Le, Rennesson, S., Semond, F., Patriarche, G., Largeau, L., Turban, P., Ponchet, A., Cornet, C.

Publikováno v: Phys. Rev. Materials 2, 060401 (2018)

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is

Externí odkaz: http://arxiv.org/abs/1804.02358

On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations.

Autor: Vennéguès, P., Largeau, L., Brändli, V., Damilano, B., Tavernier, K., Bernard, R., Courville, A., Rennesson, S., Semond, F., Feuillet, G., Cornet, C.

Publikováno v: Journal of Applied Physics; 10/28/2022, Vol. 132 Issue 16, p1-10, 10p

Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

Autor: BRIMONT, Christelle, DOYENNETTE, Laetitia, Kreyder, G., Reveret, F., Disseix, P., Medard, F., LEYMARIE, J., Cambril, E., Bouchoule, S., Gromovyi, M., Alloing, B., RENNESSON, S., Semond, F., Zuniga-perez, J., GUILLET, Thierry

Publikováno v: Physical Review Applied
Physical Review Applied, American Physical Society, 2020, 14 (5), pp.4060. ⟨10.1103/physrevapplied.14.054060⟩
Physical Review Applied, American Physical Society, 2020, 14 (5), ⟨10.1103/physrevapplied.14.054060⟩

We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully anal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18ccb6f60f66e4d5bedbc5ccf843af42
https://hal.archives-ouvertes.fr/hal-03034132/document

Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD

Autor: BRIMONT, Christelle, DOYENNETTE, Laetitia, Tabataba-vakili, Farsane, Roland, I., El Kurdi, M., Checoury, X., Sauvage, S., Paulillo, B, Colombelli, R, RENNESSON, S., Frayssinet, Eric, Brault, Julien, Damilano, B., Duboz, J. y., Semond, F., Gayral, B., Boucaud, P., GUILLET, Thierry

Publikováno v: International Workshop on Nitride Semiconductors 2018 (IWN 2018)
International Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan

International audience; The integration of nitride semiconductors on a silicon platform is a very promising field for nanophotonic applications in the UV-blue spectral range. Efficient sources are a main topic that can be achieved by compact microlas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a401cef0115cc15e43209f88a4921f80
https://hal.science/hal-01952415