Výsledky vyhledávání - "RAMZAN, MUHAMMAD S."

Report

Electronic and Excitonic Properties of MSi2Z4 Monolayers

Autor: Woźniak, Tomasz, Asghar, Umm-e-hani, Junior, Paulo E. Faria, Ramzan, Muhammad S., Kuc, Agnieszka B.

MA2Z4 monolayers form a new class of hexagonal non-centrosymmetric materials hosting extraordinary spin-valley physics. While only two compounds (MoSi2N4 and WSi2N4) were recently synthesized, theory predicts interesting (opto)electronic properties o

Externí odkaz: http://arxiv.org/abs/2210.10679

Zobrazit plný text záznamu

Report

Gas Sensing Properties of single-material SnP3 logical junction via Negative Differential Resistance: Theoretical Study

Autor: Ramzan, Muhammad S., Kim, Han Seul, Kuc, Agnieszka B.

The field of 2D materials has gained a lot of attention for vast range of applications. Amongst others, the sensing ability towards harmful gases is the application, which we explored in the present work using quantum-mechanical simulations for the S

Externí odkaz: http://arxiv.org/abs/2104.07702

Zobrazit plný text záznamu

Report

Tuning valleys and wave functions of van der Waals heterostructures by varying the number of layers: A first-principles study

Autor: Ramzan, Muhammad S., Kunstmann, Jens, Kuc, Agnieszka B.

In van der Waals heterostructures of two-dimensional transition-metal dichalcogenides (2D TMDCs) electron and hole states are spatially localized in different layers forming long-lived interlayer excitons. Here, we have investigated, from first princ

Externí odkaz: http://arxiv.org/abs/2011.01198

Zobrazit plný text záznamu