Zobrazeno 1 - 10
of 717
pro vyhledávání: '"RAMSTEINER, M."'
Autor:
Lv, H., da Silva, A., Figueroa, A. I., Guillemard, C., Aguirre, I. Fernández, Camosi, L., Aballe, L., Valvidares, M., Valenzuela, S. O., Schubert, J., Schmidbauer, M., Herfort, J., Hanke, M., Trampert, A., Engel-Herbert, R., Ramsteiner, M., Lopes, J. M. J.
Publikováno v:
Small (2023), 2302387
Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. T
Externí odkaz:
http://arxiv.org/abs/2303.10252
Autor:
Windsor, Y. W., Zahn, D., Kamrla, R., Feldl, J., Seiler, H., Chiang, C. -T., Ramsteiner, M., Widdra, W., Ernstorfer, R., Rettig, L.
Publikováno v:
Phys. Rev. Lett. 126, 147202 (2021)
We use femtosecond electron diffraction to study ultrafast lattice dynamics in the highly correlated antiferromagnetic (AF) semiconductor NiO. Using the scattering vector (Q) dependence of Bragg diffraction, we introduce a Q-resolved effective lattic
Externí odkaz:
http://arxiv.org/abs/2011.07289
Publikováno v:
Journal of Applied Physics 127, 235105 (2020)
Raman spectroscopy is utilized to study the magnetic characteristics of heteroepitaxial NiO thin films grown by plasma-assisted molecular beam epitaxy on MgO(100) substrates. For the determination of the N\'eel temperature, we demonstrate a reliable
Externí odkaz:
http://arxiv.org/abs/2007.11982
Autor:
Auzelle, T., Azadmand, M., Flissikowski, T., Ramsteiner, M., Morgenroth, K., Stemmler, C., Fernández-Garrido, S., Sanguinetti, S., Grahn, H. T., Geelhaar, L., Brandt, O.
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at tempe
Externí odkaz:
http://arxiv.org/abs/2001.06387
Publikováno v:
In Journal of Alloys and Compounds 10 January 2023 931
Akademický článek
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Publikováno v:
In Journal of Alloys and Compounds 25 March 2021 858
Publikováno v:
Phys. Rev. B 93, 195212 (2016)
We investigate the modulation of optical phonons in semiconductor crystal by surface acoustic wave (SAW) propagating on the crystal surface. The SAW fields induce changes on the order of 10\textsuperscript{-3} in the average Raman scattering intensit
Externí odkaz:
http://arxiv.org/abs/1601.01883
Publikováno v:
In Journal of Alloys and Compounds 25 May 2020 824
Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
Autor:
Nakhaie, S., Wofford, J. M., Schumann, T., Jahn, U., Ramsteiner, M., Hanke, M., Lopes, J. M. J., Riechert, H.
Publikováno v:
Applied Physics Letters 106, 213108 (2015)
Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. T
Externí odkaz:
http://arxiv.org/abs/1501.06606